A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.

A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising multiple encapsulating layers and multiple signal distribution structures, and a method of manufacturing thereof.

One superconducting qubit device package disclosed herein includes a die having a first face and an opposing second face, and a package substrate having a first face and an opposing second face. The die includes a quantum device including a plurality of superconducting qubits and a plurality of resonators on the first face of the die, and a plurality of conductive pathways coupled between conductive contacts at the first face of the die and associated ones of the plurality of superconducting qubits or of the plurality of resonators. The second face of the package substrate also includes conductive contacts. The device package further includes first level interconnects disposed between the first face of the die and the second face of the package substrate, coupling the conductive contacts at the first face of the die with associated conductive contacts at the second face of the package substrate.

A photosensitive resin composition is also provided that includes a polymer precursor selected from a polyimide precursor and a polybenzoxazole precursor; a photo-radical polymerization initiator; and a solvent, in which an acid value of an acid group contained in the polymer precursor and having a neutralization point in a pH range of 7.0 to 12.0 is in a range of 2.5 to 34.0 mgKOH/g, and either the polymer precursor contains a radically polymerizable group or the photosensitive resin composition includes a radically polymerizable compound other than the polymer precursor.

A photosensitive resin composition is also provided that includes a polymer precursor selected from a polyimide precursor and a polybenzoxazole precursor; a photo-radical polymerization initiator; and a solvent, in which an acid value of an acid group contained in the polymer precursor and having a neutralization point in a pH range of 7.0 to 12.0 is in a range of 2.5 to 34.0 mgKOH/g, and either the polymer precursor contains a radically polymerizable group or the photosensitive resin composition includes a radically polymerizable compound other than the polymer precursor.

Systems and methods of conductively coupling at least three semiconductor dies included in a semiconductor package using a multi-die interconnect bridge that is embedded, disposed, or otherwise integrated into the semiconductor package substrate are provided. The multi-die interconnect bridge is a passive device that includes passive electronic components such as conductors, resistors, capacitors and inductors. The multi-die interconnect bridge communicably couples each of the semiconductor dies included in the at least three semiconductor dies to each of at least some of the remaining at least three semiconductor dies. The multi-die interconnect bridge occupies a first area on the surface of the semiconductor package substrate. The smallest of the at least three semiconductor dies coupled to the multi-die interconnect bridge 120 occupies a second area on the surface of the semiconductor package substrate, where the second area is greater than the first area.

Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The package includes a substrate having a core layer disposed between a first dielectric layer and a second dielectric layer, a die disposed in a cavity of the core layer, and an encapsulant disposed in the cavity between the die and a sidewall of the cavity. The package further includes a first patterned conductive layer disposed within the first dielectric layer, a device disposed on an outer surface of the first dielectric layer such that the first patterned conductive layer is between the device and the core layer, a second patterned conductive layer disposed within the second dielectric layer, and a conductive pad disposed on an outer surface of the second dielectric layer such that the second patterned conductive layer is between the conductive pad and the core layer.

A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

Embodiments described herein provide techniques for using a stress absorption material to improve solder joint reliability in semiconductor packages and packaged systems. One technique produces a semiconductor package that includes a die on a substrate, where the die has a first surface, a second surface opposite the first surface, and a sidewall surface coupling the first surface to the second surface. The semiconductor package further includes a stress absorption material contacting the sidewall surface of the die and a molding compound separated from the sidewall surface of the die by the stress absorption material. The Young's modulus of the stress absorption material is lower than the Young's modulus of the molding compound. One example of a stress absorption material is a photoresist.