A semiconductor storage device according to an embodiment includes a substrate, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip includes a first surface contacting with the substrate, a second surface on an opposite side to the first surface, and a first pad provided on the second surface. The second semiconductor chip includes a third surface contacting with the second surface, a fourth surface on an opposite side to the third surface, and a cutout portion. The cutout portion is provided at a corner portion where the third surface crosses a lateral surface between the third surface and the fourth surface. The cutout portion overlaps with at least a part of the first pad as viewed from above the fourth surface.

A package structure is provided. The package structure includes a redistribution structure and a first semiconductor die over the redistribution structure. The package structure also includes a wall structure laterally surrounding the first semiconductor die and the wall structure includes a plurality of partitions separated from one another. The package structure also includes an underfill material between the wall structure and the first semiconductor die. The package structure also includes a molding compound encapsulating the wall structure and the underfill material.

A clock circuit constructed in a processor integrated circuit includes a phase lock loop PLL, a clock tree, and a clock grid. The clock tree includes a plurality of clock buffers in a layered structure, The clock tree is configured to receive a first clock signal clk_1 that is output by the phase lock loop PLL, and to output a second clock signal clk_2. A plurality of child node circuits (400) are disposed on some nodes of the clock grid, and are configured to generate a third clock signal clk_3 based on the second clock signal clk_2. The clock grid (330) and the clock tree (320) are distributed on multiple dies in a three-dimensional structure of the processor integrated circuit.

A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

According to an embodiment of the invention, a semiconductor device comprises a substrate, a semiconductor die and a first shielding structure. The semiconductor die is disposed on the substrate and comprises an electronic device. The first shielding structure is formed outside of the semiconductor die and disposed under the electronic device.

A package that includes a substrate, a first integrated device coupled to the substrate, and a second integrated device coupled to the first integrated device. A portion of the second integrated device overhangs over the first integrated device. The second integrated device is configured to be coupled to the substrate. The second integrated device includes a front side and a back side. The front side of the second integrated device faces the substrate.

An electronic package is provided, in which a first electronic element and a second electronic element are disposed on a first side of a circuit structure and a second side of the circuit structure, respectively, where a first metal layer is formed between the first side of the circuit structure and the first electronic element, a second metal layer is formed on a surface of the second electronic element, and at least one thermally conductive pillar is disposed on the second side of the circuit structure and extends into the circuit structure to thermally conduct the first metal layer and the second metal layer. Therefore, through the thermally conductive pillar, heat generated during operations of the first electronic element and the second electronic element can be quickly dissipated to an external environment and would not accumulate.

A semiconductor package includes: a substrate structure having a first surface and an opposite second surface; a semiconductor chip on the first surface; and a connection bump on the second surface. The substrate structure includes: interconnection patterns disposed at different levels relative to the second surface; connection vias connecting the interconnection patterns; and a passivation layer covering a portion of the interconnection patterns and having an opening. The interconnection patterns include a first pattern and a second pattern, wherein the first pattern and the second pattern are adjacent to the second surface, and wherein a side surface of the first pattern faces a side surface of the second pattern. The second pattern includes a pad pattern and a metal layer in contact with the pad pattern and the connection bump. The first pattern has a first thickness and the second pattern has a pad thickness that is greater than the first thickness.

A package assembly includes a package substrate, a package lid located on the package substrate and including a plate portion, an outer foot extending from the plate portion, and an inner foot having a height greater than or equal to a height of the outer foot, extending from the plate portion and including a first inner foot corner portion located inside a first corner of the outer foot, and an adhesive that adheres the outer foot to the package substrate and adheres the inner foot to the package substrate.