Patent classifications
H01L2924/15322
Semiconductor device package having warpage control and method of forming the same
A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.
Semiconductor package and related methods
Implementations of semiconductor packages may include: a substrate comprising a first side and a second side and a hole in the substrate. The hole extending from the first side to the second side of the substrate and positioned in a center of the substrate. The semiconductor packages may also include a bushing around the hole to the first side of the substrate. The semiconductor packages may also include a plurality of pin holders arranged and coupled on the substrate. The semiconductor package may also include a molding compound at least partially encapsulating the substrate, encapsulating a side surface of the bushing, and encapsulating a plurality of side surfaces of the plurality of pin holders.
Packaging with substrates connected by conductive bumps
A semiconductor structure includes a first substrate including a first surface and a second surface opposite to the first surface; a first die disposed over the second surface of the first substrate; a plurality of first conductive bumps disposed between the first die and the first substrate; a molding disposed over the first substrate and surrounding the first die and the plurality of first conductive bumps; a second substrate disposed below the first surface of the first substrate; a plurality of second conductive bumps disposed between the first substrate and the second substrate; and a second die disposed between the first substrate and the second substrate.
POWER SEMICONDUCTOR MODULE AND ELECTRONIC DEVICE
In a power semiconductor module, a first conductive layer including first to fourth electrodes are formed on one of principal surfaces of an insulating layer, and a conductive substrate functioning as a second conductive layer is formed on the other one of principal surfaces. Current paths are switched by controlling switching of a first transistor and a second transistor disposed on a surface of the first conductive layer thereby performing a power conversion. A capacitor is connected, in a region, between the first electrode and the second electrode. When a current flows in the region through the second conductive layer, a charging/discharging current occurs in the capacitor, which results in magnetic field cancellation.
Vertical shielding and interconnect for SIP modules
Vertical shielding and interconnect structures for system-in-a-package modules, where the vertical shielding and interconnect structures are readily manufactured and are space efficient.
SEMICONDUCTOR PACKAGE AND RELATED METHODS
Implementations of semiconductor packages may include: a substrate comprising a first side and a second side and a hole in the substrate. The hole extending from the first side to the second side of the substrate and positioned in a center of the substrate. The semiconductor packages may also include a bushing around the hole to the first side of the substrate. The semiconductor packages may also include a plurality of pin holders arranged and coupled on the substrate. The semiconductor package may also include a molding compound at least partially encapsulating the substrate, encapsulating a side surface of the bushing, and encapsulating a plurality of side surfaces of the plurality of pin holders.
Fan-out ball grid array package structure and process for manufacturing the same
A surface mount structure comprises a redistribution structure, an electrical connection and an encapsulant. The redistribution structure has a first surface and a second surface opposite the first surface. The electrical connection is on the first surface of the redistribution structure. The encapsulant encapsulates the first surface of the redistribution structure and the electrical connection. A portion of the electrical connection is exposed by the encapsulant.
WIRING BOARD AND ELECTRONIC DEVICE
A wiring board includes: a connection pad; an insulating layer that covers the connection pad and has an opening portion exposing a portion of the connection pad; and a metal pin that is disposed on the insulating layer and that is connected to the connection pad through a metal bonding material provided in the opening portion. The opening portion includes a main opening portion, and a plurality of protrusive opening portions that communicate with the main opening portion and that protrude outward from an outer circumference of the main opening portion. An outer circumference of a lower end surface of the metal pin, which is opposed to the insulating layer, is located outside the outer circumference of the main opening portion.
Antenna-in-package structures with broadside and end-fire radiations
Package structures are provided having antenna-in-packages that are integrated with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems that operate in the millimeter wave (mmWave) frequency range with radiation in broadside and end-fire directions.
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A semiconductor structure includes a first substrate including a first surface and a second surface opposite to the first surface; a first die disposed over the second surface of the first substrate; a plurality of first conductive bumps disposed between the first die and the first substrate; a molding disposed over the first substrate and surrounding the first die and the plurality of first conductive bumps; a second substrate disposed below the first surface of the first substrate; a plurality of second conductive bumps disposed between the first substrate and the second substrate; and a second die disposed between the first substrate and the second substrate.