Package structures are provided having antenna-in-packages that are integrated with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems that operate in the millimeter wave (mmWave) frequency range with radiation in broadside and end-fire directions.

Package structures are provided having antenna-in-packages that are integrated with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems that operate in the millimeter wave (mmWave) frequency range with radiation in broadside and end-fire directions.

Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (PoP) with enhanced tolerance for warping. In one such packaged microelectronic device, at least one redistribution layer includes first interconnect pads on a lower surface and second interconnect pads on an upper surface of the at least one redistribution layer. Interconnect structures are on and extend away from corresponding upper surfaces of the second interconnect pads. A microelectronic device is coupled to an upper surface of the at least one redistribution layer. A dielectric layer surrounds at least portions of shafts of the interconnect structures. The interconnect structures have upper ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

Vertical shielding and interconnect structures for system-in-a-package modules, where the vertical shielding and interconnect structures are readily manufactured and are space efficient.

Package structures are provided having antenna-in-packages that are integrated with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems that operate in the millimeter wave (mmWave) frequency range with radiation in broadside and end-fire directions.

Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (PoP) with enhanced tolerance for warping. In one such packaged microelectronic device, at least one redistribution layer includes first interconnect pads on a lower surface and second interconnect pads on an upper surface of the at least one redistribution layer. Interconnect structures are on and extend away from corresponding upper surfaces of the second interconnect pads. A microelectronic device is coupled to an upper surface of the at least one redistribution layer. A dielectric layer surrounds at least portions of shafts of the interconnect structures. The interconnect structures have upper ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (PoP) with enhanced tolerance for warping. In one such packaged microelectronic device, interconnect structures are in an outer region of the packaged microelectronic device. A microelectronic device is coupled in an inner region of the packaged microelectronic device inside the outer region. A dielectric layer surrounds at least portions of shafts of the interconnect structures and along sides of the microelectronic device. The interconnect structures have first ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.

A device for forming a housing for a power semiconductor module arrangement includes a mold. The mold includes a first cavity including a plurality of first openings and a second opening, the second opening being coupled to a runner system, wherein the runner system is configured to inject a mold material into the first cavity through the second opening. The device further includes a plurality of sleeves or hollow bushings, wherein a first end of each of the plurality of sleeves or hollow bushings is arranged in one of the first openings, and wherein a second end of each of the plurality of sleeves or hollow bushings extends to the outside of the mold, a heating element configured to heat the mold, and a cooling element configured to cool the plurality of sleeves or hollow bushings.

A manufacturing method of an integrated substrate structure is provided. The manufacturing method includes the following steps. A fine redistribution structure is formed over a temporary carrier. A plurality of first trenches is formed in the fine redistribution structure to form a plurality of fine redistribution segments. A coarse redistribution structure is coupled to the plurality of fine redistribution segments through a plurality of conductive connectors. A size of the coarse redistribution structure is greater than a size of the plurality of fine redistribution segments. The temporary carrier is removed from the plurality of fine redistribution segments after the coupling.