A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.

There is provided a semiconductor device including a substrate whose surface is made of an insulation material, a semiconductor chip flip-chip connected on the substrate, and a heat sink bonded to the semiconductor chip via a thermal interface material and fixed to the substrate outside the semiconductor chip, in which the heat sink has a protrusion part protruding toward the substrate and bonded to the substrate via a conductive resin between a part bonded to semiconductor chip and a part fixed to the substrate and the heat sink has a stress absorbing part. According to the present invention, the protrusion part of the heat sink is prevented from being peeled off from the substrate at the part where the protrusion part of the heat sink is bonded to the substrate.

A module includes a substrate including a first surface, at least one first component mounted on the first surface, a shield member mounted on the first surface to cover the first component, and a first sealing resin arranged at least between the shield member and the first surface. The shield member includes a top surface portion in a form of a plate and a plurality of leg portions that extend from the top surface portion toward the first surface.

A semiconductor device including a package, a lid and a thermal interface material is provided. The package includes a packaging substrate, semiconductor dies and an insulating encapsulation, wherein the semiconductor dies are disposed on and electrically connected to the packaging substrate, and the insulating encapsulation encapsulates the semiconductor dies. The lid is disposed on the packaging substrate, the lid includes a cover portion and foot portion extending from the cover portion to the packaging substrate, wherein the cover portion covers the semiconductor dies and the insulating encapsulation, the foot portion includes foot segments laterally spaced apart from one another, and the foot segments are attached to the packaging substrate. The cover portion of the lid is attached to the package through the thermal interface material.

A semiconductor package includes a wiring board including at least one pair of connection structures electrically connecting at least one pair of differential signal transmission lines and at least one pair of differential signal transmission terminals, respectively. The at least one pair of connection structures includes first via structures staggered in a vertical direction, at least one first connection line electrically connecting the first via structures, second via structures staggered in the vertical direction, and at least one second connection line electrically connecting the second via structures. The at least one first connection line is spaced apart from the at least one second connection line in the vertical direction and electrically insulated therefrom, and intersects the at least one second connection line in the vertical direction.

An integrated device package is disclosed. The integrated device package can include an integrated device die, an element, a cavity, and an electrical interconnect. The element can have an antenna structure. The element can be attached to a surface of the integrated device. The cavity can be disposed between the integrated device die and the antenna structure. The electrical interconnect can connect the integrated device die and the antenna structure.

A semiconductor package including a substrate and at least one semiconductor chip on the substrate may be provided. The substrate may include a body layer having a top surface and a bottom surface, a first thermal conductive plate on the top surface of the body layer, the first thermal conductive plate connected to a ground terminal of the semiconductor chip, and a thermal conductive via penetrating the body layer and being in contact with the first thermal conductive plate.

A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.

There is provided a semiconductor device including a substrate whose surface is made of an insulation material, a semiconductor chip flip-chip connected on the substrate, and a heat sink bonded to the semiconductor chip via a thermal interface material and fixed to the substrate outside the semiconductor chip, in which the heat sink has a protrusion part protruding toward the substrate and bonded to the substrate via a conductive resin between a part bonded to semiconductor chip and a part fixed to the substrate and the heat sink has a stress absorbing part. According to the present invention, the protrusion part of the heat sink is prevented from being peeled off from the substrate at the part where the protrusion part of the heat sink is bonded to the substrate.