Disclosed are an optical device capable of precise adjustment of optical output intensity, and a method for manufacturing an optical device. An optical device including a laser diode, according to one aspect of the present embodiment, comprises: a laser diode for outputting light having a predetermined wavelength; an optical output unit in which output light of the laser diode is optically coupled and the output of the optical device takes place; and an optical isolator disposed between the laser diode and the optical output unit. The output light of the laser diode passes through the optical isolator and the output of the optical device takes place through the optical output unit, and the intensity of the output light of the optical device is determined by the rotation of the optical isolator.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.

An optical assembly comprising a busbar system comprising an electrically conductive first busbar conductively coupled to one or more electrically conductive mechanical fasteners and one or more vertical-cavity surface-emitting laser (VCSEL) array modules each comprising one or more electrically conductive contacts. Each VCSEL array module is releasably fastened to the busbar system by the one or more of the mechanical fasteners. When in a fastened position, the one or more mechanical fasteners are conductively coupled to the one or more electrically conductive contacts to provide an electrical connection between the first busbar and the one or more VCSEL array modules.

An optical waveguide package includes a substrate, a cladding on a first surface of the substrate, and a core in the cladding. The cladding has a recess surrounding an element mount. The recess has an inner wall surface including a plurality of wall surfaces and a corner support surface between adjacent wall surfaces of the plurality of wall surfaces.

A light source module that emits a combined laser beam, and includes: a plurality of semiconductor laser elements; and a control circuit that controls power of a laser beam emitted by each of the semiconductor laser elements. The semiconductor laser elements include: a first element group that emits a first laser beam; and a second element group that emits a second laser beam. The combined laser beam includes at least one of the first laser beam or the second laser beam. The control circuit maintains an average combined-beam wavelength that is an average wavelength of the combined laser beam constant for a change in power of the combined laser beam. When the power of the first laser beam and the power of the second laser beam are equal to each other, an average wavelength of the first laser beam is longer than an average wavelength of the second laser beam.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

An apparatus includes an optical splitter configured to receive an optical signal and to split the input optical signal to provide a first and a second optical signal. The apparatus further includes an interferometer comprising a first arm and a second arm, with the first arm being configured to receive the first optical signal, and the second arm being configured to receive the second optical signal. Notably a portion of the first arm is exposed to a reference gas that attenuates light of a characteristic wavelength. The apparatus further includes an optical coupler configured to receive an output optical signal from the first arm, and an output optical signal from the second arm and to provide a third optical signal; and a photodetector configured to receive the third optical signal, and to provide a photocurrent. The photocurrent increases when the difference between the characteristic wavelength and the wavelength of the optical signals increases. The apparatus also comprises a feedback control circuit configured to change the properties of the laser to be locked until an error signal indicative of the difference between the characteristic wavelength and the wavelength of the laser is substantially zero.

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.

A semiconductor surface-emitting laser array can be provided with a group of independently addressable light-emitting pixels arranged in at least two rows and in a linear array on a common substrate chip and including a common cathode and a dedicated channel associated with an address trace line for each pixel. An aggregate linear pitch can be achieved between pixels of the at least two rows along the linear array in a cross process direction that is less than the size of a pixel. The semiconductor laser array can include more than one common substrate chip tiled and stitched together in a staggered arrangement to provide an at least 11-inch wide, 1200pdi imager with timing delays associated with each of the more than one common substrate chip in the staggered arrangement.

A 3D package for semiconductor thermal management can include a 3D submount forming a mechanical block including at least one embedded channel formed within the mechanical block and configured to accept cooling liquid therethrough, a first tubular connection for providing cooling liquid to the at least one embedded channel, and a second tubular connection for removing cooling liquid from the at least one embedded channel. Integrated slots can be provided for accepting and mounting semiconductor components. Mounting holes can be formed in the mechanical block for securing optical elements. At least one semiconductor laser array die can be secured to the mechanical block at the integrated slots, wherein the at least one semiconductor laser array die is kept cool by the cooling liquid flowing through the at least one embedded channel.