Embodiments of the disclosure provide for a submount for a transmitter of an optical sensing system. The submount may include a substrate. The submount may also include a set of alignment fiducials formed using semiconductor lithography and coupled to the substrate. Still further, the submount may include at least one laser bar coupled to the substrate based on the set of alignment fiducials.

A chip-scale package for an edge-emitting semiconductor device and a semiconductor device assembly including such a chip-scale package are provided. The chip-scale package includes an edge-emitting semiconductor device chip, a top submount disposed on a top surface of the chip, and a bottom submount disposed on a bottom surface of the chip. The top-submount area and the bottom-submount area are each greater than the chip area and less than or equal to about 1.2 times the chip area.

Methods and systems for optical assemblies are disclosed. Optical assemblies can comprise optical elements that may not require active alignment and allow for reduced performance variations. To allow for passive assembly with a machine like a bonder tool, assembly components can have bonding pads and/or fiducial markers that are fabricated using laser micromachining techniques.

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

A semiconductor laser device includes a substrate including a main surface, a semiconductor laser element including a resonator extending along a first direction, and a plurality of first wire groups and a plurality of second wire groups arranged along the first direction. Each first wire group includes a first wire bonded to a first bonding region of a top surface of the semiconductor laser element and a first mark portion, and a first mark portion formed on the main surface. Each second wire group includes a second wire bonded to a second bonding region of the main surface, and a second mark portion formed on the main surface. In a top view of the main surface, the first wire is disposed at a position overlapping the first mark portion, and the second wire is disposed at a position overlapping the second mark portion.

A semiconductor laser device includes a substrate including a main surface, a semiconductor laser element including a resonator extending along a first direction, and a plurality of first wire groups and a plurality of second wire groups arranged along the first direction. Each first wire group includes a first wire bonded to a first bonding region of a top surface of the semiconductor laser element and a first mark portion, and a first mark portion formed on the main surface. Each second wire group includes a second wire bonded to a second bonding region of the main surface, and a second mark portion formed on the main surface. In a top view of the main surface, the first wire is disposed at a position overlapping the first mark portion, and the second wire is disposed at a position overlapping the second mark portion.

Aspects for an on-chip or integrated Light Detection and Ranging (LiDAR) device are described herein. The aspects may include a semiconductor optical waveguide integrated in the LiDAR device. A receiving end of the semiconductor optical waveguide may receive a light beam from a light source. One or more beam splitters may be configured to split the light beam into two or more light beams. At least one semiconductor optical amplifier (SOA) may be integrated to amplify the power of the light beam or the split two or more light beams.

Aspects for an on-chip or integrated Light Detection and Ranging (LiDAR) device are described herein. The aspects may include a semiconductor optical waveguide integrated in the LiDAR device. A receiving end of the semiconductor optical waveguide may receive a light beam from a light source. One or more beam splitters may be configured to split the light beam into two or more light beams. At least one semiconductor optical amplifier (SOA) may be integrated to amplify the power of the light beam or the split two or more light beams.

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

A structure and method of formation of a buried heterostructure laser die with alignment aids wherein the alignment aids include lateral and vertical structures formed on the die. Lateral alignment aids are formed using a same mask layer as the ridge structure of the laser and provide fiducials that are formed in reference to the ridge structure. Vertical alignment aids, and vertical protrusions of the lateral alignment aids are formed using etch stop layers positioned in the buried heterostructure laser layer structure.