A mount connects a light emitting device, such as a laser diode assembly, to an optical bench. The mount may include a thermoelectrical module coupled to a sub-element of a heat exchanger extending through an opening formed in the optical bench. The thermoelectrical module acts as a heat sink to draw heat outwardly from the laser diode and cool the same. The heat sink enables the laser diode to transmit heat thereto such that substantially all of the heat generated by the laser diode sinks to the heat exchanger. As such, the laser diode transfers virtually no heat to the optical bench so the optical bench is free of deflections or distortions resultant from the heat generated during generation of the laser beam.

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.

A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

The present disclosure describes optoelectronic modules that include an optical system tilted with respect to a focal plane. For example, an optoelectronic module can includes an optical system including a vertical alignment feature. An optoelectronic sub-assembly includes an active optoelectronic device, wherein the vertical alignment rests on a surface of the optoelectronic sub-assembly and wherein an optical axis of the optical system is tilted with respect to a focal plane in the sub-assembly.

A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.

A method of producing an optoelectronic component includes providing a carrier including a top side; creating at the top side of the carrier a region that is recessed with respect to a mounting region of the top side to form a step between the mounting region and the recessed region; arranging at the top side of the carrier a metallization extending over the mounting region and the recessed region; creating a separating track in the metallization, wherein the metallization is completely severed at least in sections in the mounting region and is at least not completely severed in the recessed region; and arranging an optoelectronic semiconductor chip above the mounting region of the top side, wherein the optoelectronic semiconductor chip is aligned at the separating track.