A high speed spatial light modulators are described. In one non-limiting example, an optical phased array structure comprises a vertical cavity surface-emitting laser (VCSEL) that provides a light beam and a phase delay unit that includes a bi-layer photonic crystal slab. The bi-layer photonic crystal slab (PCS) is attached to the VCSEL and comprises two silicon PCS layers separated by a dielectric layer. The optical phased array structure is configured to control a direction of the light beam by a voltage applied to the phase delay unit. By incorporating a dispersive layer (e.g. graphene), the absorption of the structure can be modulated and accordingly the reflection of the surface can be modulated as well.

A plasmonic laser array device may comprise a first microcavity element having a first radiating end facet and a second radiating end facet opposite the first radiating end facet in a longitudinal direction of the device. The device may comprise a second microcavity element having a third radiating end facet and a fourth radiating end facet opposite the third radiating facet in the longitudinal direction. The device may comprise a first microcavity gap configured to separate the first microcavity element and the second microcavity element in the longitudinal direction. The device may comprise a bottom (e.g., metal) layer configured to underly the first microcavity element, the second microcavity element, and the first microcavity gap. The device may comprise an arrangement that places the first microcavity element and the second microcavity element into a phase-locked orientation for a phased-locked operation of the plasmonic laser array device.

A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and a covering part configured to cover the laminated structure, wherein the columnar parts have a light emitting layer, and the covering part is provided with a through hole penetrating the covering part.

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

A light-emitting device includes: a substrate; first column portions provided at the substrate; a plurality of second column portions provided at the substrate and that surround the first column portions as viewed from a normal direction of the substrate; a first semiconductor layer coupled to the first column portions; an insulating layer covering the first semiconductor layer and the second column portions; and a wiring line electrically coupled to the first semiconductor layer. Each of the first column portions and each of the second column portions includes an n-type second semiconductor layer, a p-type third semiconductor layer, and a u-type fourth semiconductor layer. The fourth semiconductor layer at each of the first column portions is injected with current to emit light. The fourth semiconductor layer at each of the second column portions is not injected with current. The wiring line overlaps at least one of the second column portions.

A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

A semiconductor laser including a waveguide having a core, a confinement layer to bury the core, and a metallization layer. The core includes an active core region. The confinement layer surrounds the core and includes a first confinement layer between the core and the semiconductor substrate below the core, a second confinement layer above the core, and a third confinement layer to either or both sides of the core. The metallization layer is located above the confinement layers and include a first metallization layer and a second metallization layer. The first metallization layer is in direct contact with the second confinement layer and the third confinement layer, while the second metallization layer is disposed above the first layer. The first metallization layer is tuned to have a plasmon resonance corresponding to a higher order mode with high loss.

A light-emitting device includes a laminate provided at a substrate, a first electrode provided on an opposite side of the laminate from the substrate, and a second electrode provided on an opposite side of the first electrode from the substrate. The laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is provided between the substrate and the light-emitting layer. The first electrode constitutes a plurality of column portions. The second electrode is coupled to the plurality of column portions. The first electrode is a transparent electrode formed of a metal oxide transmitting light generated at the light-emitting layer.

Provided are a vertical-cavity surface-emitting laser, a manufacturing method, a distance measuring device, and an electronic device. The vertical-cavity surface-emitting laser includes a lower electrode, a substrate, a lower Bragg reflector, an active area, a current limiting layer, an upper Bragg reflector, a protective layer, and an upper electrode. The upper electrode includes at least two sub-electrodes, the at least two sub-electrodes are electrically connected, and the at least two sub-electrodes define one or more light-exiting windows. Each sub-electrode is provided with a corresponding light-exiting window so that the luminous power is increased. Each sub-electrode defines the light-exiting window, and a plurality of sub-electrodes are electrically connected so that the distribution uniformity of the light spots is increased, and the quality of the laser beam is improved.

A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.