A compound semiconductor has a high electron concentration of 5×10.sup.19 cm.sup.−3 or higher, exhibits an electron mobility of 46 cm.sup.2/V.Math.s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

A semiconductor light-emitting element having a structure in which a substrate, a first reflector, a resonator cavity including an active layer, a second reflector and a transparent conductive film are stacked in this sequence, the semiconductor light-emitting element comprising: a first current constriction portion configured with an oxidation constriction layer; and a second current constriction portion configured with an insulation film, which is formed on an upper face of the second reflector and has an opening, and a contact portion between the transparent conductive film and a semiconductor layer with which the transparent conductive film is in contact, wherein a width d2 of the second current constriction portion is smaller than a width d1 of the first current constriction portion.

A semiconductor light-emitting element having a structure in which a substrate, a first reflector, a resonator cavity including an active layer, a second reflector and a tunnel junction portion are stacked in this sequence, comprising: a first current constriction portion configured with an oxidation constriction layer; and a second current constriction portion including the tunnel junction portion, wherein a width d2 of the second current constriction portion is smaller than a width d1 of the first current constriction portion.

A light source device in which a plurality of semiconductor light-emitting elements are disposed, each of the plurality of semiconductor light-emitting elements being configured with a first reflector, a resonator cavity including an active layer, and a second reflector which are stacked in this sequence on a semiconductor substrate, wherein in each of the semiconductor light-emitting elements, an electric contact region for supplying carriers to the active layer is disposed on a surface of the second reflector on an opposite side thereof to the active layer, and wherein the plurality of semiconductor light-emitting elements include a first semiconductor light-emitting element of which shape of the contact region is a first shape, and a second semiconductor light-emitting element of which shape of the contact region is a second shape which is different from the first shape.

A laminate (22) is formed on a semiconductor substrate (10). Two or more grooves (54) are formed in the laminate (22). A mesa (24) with two grooves among the two or more grooves (54) positioned on both sides is formed. An insulating resin film (30) is embedded into the two or more grooves (54). A first opening (32) is formed at the insulating resin film (30) embedded in one of the two or more grooves (54) and an electrode (46) extracted upward from a bottom surface (36) is formed. A first side surface (34) of the insulating resin film (30) is inclined in a forward tapered direction.

A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate having a first surface and a second surface that are opposed to each other; a first semiconductor layer that is stacked on the first surface of the semi-insulating substrate and has a lattice plane non-continuous to the semi-insulating substrate; and a semiconductor stacked body that is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The first semiconductor layer has a first electrical conduction type. The semiconductor stacked body has a light emitting region configured to emit laser light.

A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate; a semiconductor layer; a semiconductor stacked body; a buried layer; and a non-continuous lattice plane. The semi-insulating substrate has a first surface and a second surface that are opposed to each other. The semiconductor layer is stacked on the first surface of the semi-insulating substrate. The semiconductor layer has electrical conductivity. The semiconductor stacked body is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The semiconductor stacked body has a light emitting region and includes a ridge section on the semi-insulating substrate side. The light emitting region is configured to emit laser light. The buried layer is provided around the ridge section of the semiconductor stacked body. The non-continuous lattice plane is provided between the semi-insulating substrate and the semiconductor stacked body.

Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, a vertical cavity surface emitting laser (VCSEL) device is provided. The VCSEL device includes a chip for mounting on a slider and two laser diode electrodes. The chip has six surfaces, wherein a first surface of the chip is for facing the slider, a second surface of the chip is opposite the first surface, and the two laser diode electrodes are positioned in any combination on one or more of a third surface, a fourth surface, a fifth surface, or a sixth surface of the chip.