In some implementations, a vertical cavity surface emitting laser (VCSEL) array may include a substrate. In some implementations, the VCSEL array may include a set of cathodes disposed on the substrate in a first direction, wherein a cathode, of the set of cathodes, is defined by a serpentine shape. In some implementations, the VCSEL array may include a set of anodes disposed on the substrate in a second direction, wherein an anode, of the set of anodes, is defined by the serpentine shape.

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

A VCSEL array comprises series-connected VCSEL sub-arrays formed on a single chip. The VCSEL sub-arrays each comprises VCSEL emitters fabricated on a semi-insulating layer. A common cathode contact of a VCSEL sub-array is electrically connected to a common anode contact of a neighboring VCSEL sub-array. To reduce leakage, the bandgap energy level of the semi-insulating layer is higher than the photon energy of the output beam. In one embodiment, the semi-insulating layer is grown on a conductive layer. A common cathode contact of the last VCSEL sub-array in a series is electrically connected to the conductive layer. In another embodiment, multiple wire-bonding areas are electrically connected to common anode contacts of multiple VCSEL sub-arrays respectively. The wire-bonding areas provide different input impedance options for a VCSEL array.

A bottom-emitting multijunction VCSEL array includes a first reflector region, a multijunction active region, and a second reflector region. In one aspect, the multijunction VCSEL array is attached to a submount by flip-chip bonding. In another aspect, the multijunction VCSEL array further includes a contact layer formed between the first reflector region and the substrate. The multijunction VCSEL array is attached to a submount by flip-chip bonding.

Described herein are IC devices that include hybrid lasers formed with a bonding layer. Hybrid lasers include an active light-emitting region coupled to a waveguide. In a hybrid laser, the waveguide and the light-emitting regions are formed separately from different materials, e.g., the waveguide is a single-crystal silicon, and the light-emitting region includes III-V semiconductors. An amorphous group IV material, such as silicon or germanium, is advantageously used to bond the light-emitting region to the waveguide.

A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.

Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.

A reflecting mirror includes a first film and a second film on the first film, and has a reflection band where a center wavelength is λ. The first film includes a layer having a first average refractive index and another layer having a second average refractive index higher than the first average refractive index. The second film includes a layer having a third average refractive index and another layer having a fourth average refractive index higher than the third average refractive index. A sum of optical film thicknesses of the two layers of the first film is λ/2. A sum of optical film thicknesses of the two layers of the second film is greater than or equal to (n+1)λ/2 (n is an integer greater than or equal to 1).

Embodiments of the present invention include an apparatus for generating laser radiation with a semiconductor substrate, an intermediate layer arranged on the semiconductor substrate, and a Lateral Current Injection (LCI) laser arrangement arranged on the intermediate layer, wherein the intermediate layer includes a cavity extending at least under a laser strip of the LCI laser arrangement.