A reflector structure for a tunable laser and a tunable laser. A super structure grating is used as a reflector structure, and a suspended structure is formed around a region in which the super structure grating is located, to implement, using the suspended structure, thermal isolation around the region in which the super structure grating is located, and increase thermal resistance, such that less heat is lost, and heat is concentrated in the region in which the super structure grating is located, thereby improving thermal tuning efficiency of the reflector structure. Moreover, lateral support structures are disposed on two sides of the suspended structure, to provide a mechanical support for the suspended structure. In addition, regions in the super structure grating that correspond to any two lateral support structures on a same side of the suspended structure fall at different locations in a spatial period of the super structure grating.

A wavelength-tunable laser device includes: a wavelength-tunable light source part; an optical filter; a light receiving element; and a control device. Further, the control device includes: a monitor value calculating part configured to calculate a monitor value; a storage part configured to store wavelength control information; a target value calculating part configured to calculate a control target value; and a wavelength control part configured to control the wavelength of the laser beam to be the target wavelength, and the wavelength control information is information in which a wavelength, a control reference value, and mode identification information are associated with each other, and the target value calculating part calculates the control target value based on the wavelength control information stored in association with the same mode identification information when the same wavelength as the target wavelength is different from the wavelength control information stored in the storage part.

A semiconductor optical integrated device in which a forward-bias optical device and a semiconductor laser are monolithically integrated on a semiconductor substrate, includes: a passive waveguide portion that is arranged between the forward-bias optical device and the semiconductor laser; and a ground electrode that is arrange on a lower surface of the semiconductor substrate. Further, the semiconductor laser includes a mirror having a length on a side closer to the forward-bias optical device, the forward-bias optical device includes a forward-bias optical-device electrode on a side opposite to a side in contact with the semiconductor substrate, the passive waveguide portion includes a passive waveguide electrode on a side opposite to a side in contact with the semiconductor substrate, and the passive waveguide electrode is electrically connected to the ground electrode.

A wavelength-tunable light source device includes: a wavelength-tunable laser element including: a laser resonator having two reflecting mirrors having respective periodic peaks of reflection spectrums with respect to wavelength, cycles of the periodic peaks being different from each other; a gain unit in the laser resonator; and a plurality of control elements that control respective laser emission wavelengths in response to electric power supplied thereto; and a control unit that controls the electric power supplied to the control elements. Further, the control elements set, on a basis of the electric power, respective at least wavelength positions where the reflection spectrums of the two reflecting mirrors peak, and the control unit controls the control elements by setting, as sequential control targets, wavelength corresponding control set values, which correspond to discrete intermediate wavelengths between a current laser emission wavelength and a target wavelength.

Embodiments of this application disclose a laser frequency modulation method and device, a storage medium, and a laser device. The method includes: obtaining the current sweep mode of the laser device in a timing manner; when the current sweep mode is the single-band sweep mode, controlling the laser device to perform continuous sweeping on the preset band; and when the current sweep mode is the multi-band switching mode, obtaining the next band for the laser device to perform sweeping, and controlling the laser device to switch from the band to the next band.

An optical signal transmitter (AXEL) in which a quality of an optical signal waveform is maintained includes a distributed Bragg reflector to be coupled with an emission end surface of an SOA in an optical circuit unit including an optical waveguide core portion formed on an upper surface of a substrate. In the optical circuit unit, a diffraction grating formed on an upper surface side opposite to an absorption layer of an EA optical modulator and a diffraction grating formed on an upper surface side of a reflection layer of the distributed Bragg reflector have a wavelength selectivity.

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

An intelligent subsystem coupled with a system-on-chip (comprising a microprocessor/graphic processor), a radio transceiver, a voice processing module/voice processing algorithm, a foldable display, a near-field communication device, a biometric sensor and an intelligent learning algorithm is disclosed. The intelligent subsystem can respond to a user's interests and/or preferences. Furthermore, the intelligent subsystem is sensor-aware or context-aware.

A distributed feedback plus reflection (DFB+R) laser includes an active section, a passive section, a low reflection (LR) mirror, and an etalon. The active section includes a distributed feedback (DFB) grating and is configured to operate in a lasing mode. The passive section is coupled end to end with the active section. The LR mirror is formed on or in the passive section. The etalon includes a portion of the DFB grating, the passive section, and the LR mirror. The lasing mode of the active section is aligned to a long wavelength edge of a reflection peak of the etalon.

A modulator-integrated semiconductor laser (100) includes a semiconductor laser (101), an electro-absorption modulator (102), and an optical attenuator (103) that are monolithically integrated. The electro-absorption modulator (102) and the optical attenuator (103) are connected in series in a stage succeeding the semiconductor laser (101). A control unit (44) controls the DC bias voltage to be applied to the optical attenuator (103) to increase as temperature of the modulator-integrated semiconductor laser (100) rises.