An intelligent subsystem coupled with one or more radio transceivers, a voice processing module/a first set of computer implementable instructions (stored in a non-transitory storage media) to understand a voice command in a natural language and a second set of computer implementable instructions (stored in the non-transitory storage media) to provide learning or intelligence to the intelligent subsystem in response to a user's interest/preference, is disclosed. Furthermore, the intelligent subsystem is sensor-aware or context-aware.

An intelligent subsystem coupled with a Super System on Chip (SSoC)/microprocessor, a radio transceiver (e.g. a 5G/higher than 5G bandwidth radio transceiver), a voice processing module/voice processing algorithm, a display component, one or more camera sensors/computational cameras for three-dimensional (3-D) sensing of the surroundings, a near-field communication device, a biometric sensor, an artificial eye, a biological lab-on-chip (LOC)/DNA sequencing biomodule, an intelligent learning algorithm and an algorithm for three-dimensional (3-D) perception is disclosed. The Super System on Chip (SSoC) includes memristors. The intelligent subsystem can respond to a user's interests and/or preferences, provide telepresence and perceive the surroundings. Furthermore, the intelligent subsystem is sensor-aware or context-aware.

A semiconductor laser tuned with an acousto-optic modulator. The acousto-optic modulator may generate standing waves or traveling waves. When traveling waves are used, a second acousto-optic modulator may be used in a reverse orientation to cancel out a chirp created in the first acousto-optic modulator. The acousto-optic modulator may be used with standing-wave laser resonators or ring lasers.

An intelligent subsystem coupled with a radio transceiver, a voice processing module, an intelligent (smart) camera, a first set of computer implementable instructions in an artificial intelligence algorithm and a fuzzy logic algorithm (stored in one or more non-transitory storage medias) and a second set of computer implementable instructions to provide a search on an internet in response to a user's interest/preference (stored in the one or more non-transitory storage medias), wherein the first set of computer implementable instructions and the second set of computer implementable instructions are combined/integrated or separated.

A semiconductor laser, an optical transmitter component, an optical line terminal, and an optical network unit. The semiconductor laser includes a substrate, a lower waveguide layer, a lower confining layer, a central layer, an upper confining layer, a grating layer, an upper waveguide layer, and an electrode layer that are sequentially formed on the substrate. The upper confining layer, the central layer, and the lower confining layer in a filtering region form a core layer of the filtering region. The grating layer in the filtering region includes a slanted grating. Thus, a modulation chirp and dispersion of a transmitted optical pulse can be reduced.

This application provides a two-segment DBR laser and a monolithically integrated array light source chip, and relates to the field of optical communications. The two-segment DBR laser includes a grating region, a gain region, and a broadband reflector. The grating region and the broadband reflector are respectively disposed at two ends of the gain region. The grating region includes a first bottom liner, a first support structure, a first ridge waveguide structure, and a first heater. The first ridge waveguide structure is fastened by the first support structure and suspended in midair above the first bottom liner, and the first bottom liner, the first support structure, and the first ridge waveguide structure jointly form a cavity. The first heater is located on a surface that is of the first ridge waveguide structure and that faces away from the cavity.

A semiconductor laser is provided with: an active layer that excites a transverse electric (TE) mode and a transverse magnetic (TM) mode of light and constitutes at least a part of a resonator guiding the TE mode and the TM mode of light; and a diffraction grating as a frequency difference setting structure that sets the difference in oscillation frequency between the TE mode and the TM mode of light higher than a relaxation-oscillation frequency

A wavelength-tunable light source includes a wavelength-tunable laser including a first region and a second region each of which includes at least one of heaters, a frequency locker configured to receive output light of the wavelength-tunable laser and output two electric control signals whose phases are mutually different by 90° and having frequency period with respect to frequency of the output light, a thermal electric cooler on which the wavelength-tunable laser and the frequency locker are mounted, and a controller configured to control temperature of the heaters, and the thermal electric cooler on the basis of any one of the two electric control signals.

A method includes steps of: acquiring a target wavelength; acquiring a drive condition of a wavelength tunable laser diode; driving the wavelength tunable laser diode based on the drive condition; acquiring a measured value of the first current measured by a first photodetector, a measured value of a second current measured by a second photodetector and a measured value of the drive condition; determining the measured value of the first current as a first target value; calculating a second target value of the second current from the measured value of the drive condition and the target value of the first current; and coinciding a ratio of the measured value of the first current with respect to the measured value of the second current, to a ratio of the first target of the first current with respect to the second target of the second current, by changing the drive condition.

Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.