A light emitting element of the present disclosure includes a compound semiconductor substrate 11, a stacked structure 20 including a GaN-based compound semiconductor, a first light reflection layer 41, and a second light reflection layer 42. The stacked structure 20 includes, in a stacked state a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. The first light reflection layer 41 is disposed on the compound semiconductor substrate 11 and has a concave mirror section 43. The second light reflection layer 42 is disposed on a second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.

The invention relates to a method for controlling a semiconductor-laser-diode-based SS-interferometer system (SS=swept source), which allows for a wide range of application and is suitable for use in ophthalmology, in particular for imaging and for determining biometric measurement values of the eye. In the method according to the invention, by means of periodic current modulation, the operation of single semiconductor laser diodes is designed such that a highly coherent spectral laser line can be adjusted with a highest possible repetition rate and over a wide wavelength range. In addition, the following parameters: centre wavelength, sweep rate, sweep range, optical power in the eye and coherence length are adjusted such that the method is suitable for imaging and biometric applications via whole-eye scans. The proposed semiconductor-laser-diode-based SS-interferometer system is provided, in particular, for biometric measuring of the eye. Given that the embodiments are based preferably on optical, coherence tomographic scan images, the main application lies in opthalmological diagnostics, treatment and the preparation of surgical procedures and follow-up thereof.

An external cavity laser module is configured to emit a laser beam and includes: a collimation laser light source having a Littrow configuration; a diffraction grating configured to selectively reflect and transmit light of a specific wavelength; a support member supporting the collimation laser light source and the diffraction grating; and a base rotatably supporting the support member to correct an axial direction of the laser beam emitted from the external cavity laser module.

A high-power tunable laser includes a gain medium configured to emit light and amplify light intensity. The gain medium has a length equal to or greater than 1.5 mm between a backend and a frontend configured to be an output port for outputting light with amplified intensity. The high-power tunable laser further includes a wavelength tuner optically coupled to the backend to receive light from the gain medium and configured to tune wavelength for the light and have a high-reflectivity reflector to reflect the light with a tuned wavelength back to the gain medium.

A wavelength sensor for wavelength stabilization of a laser beam includes an etalon placed in the laser beam and tilted with respect to the laser beam. Reflected beams from the etalon form an interference pattern on a segmented photodetector having two detector segments. Output signals from the two detector segments are used to derive an error signal for a closed control loop to effect the wavelength stabilization.

A surface emitting laser has a Vertical-Cavity Surface emitting laser (VCSEL) structure. The VCSEL structure includes an aperture provided by a current confinement structure. An optically discontinuous portion is formed in a top Distributed Bragg Reflector (DBR) of the VCSEL structure such that it is arranged in a region with a gap between it and the aperture.

A high Q whispering gallery mode resonator with ion-implanted voids is described. A resonator device includes a resonator disk formed of an electrooptic material. The resonator disk includes a top surface, a bottom surface substantially parallel to the top surface, and a side structure between the top surface and the bottom surface. The side structure includes an axial surface along a perimeter of the resonator disk, where a midplane passes through the axial surface dividing the axial surface into symmetrical halves. The whispering gallery mode resonator disk includes voids localized at a particular depth from the top surface. At least one of the voids localized at the particular depth from the top surface is located at an outer extremity towards the perimeter of the resonator disk. The resonator device can further include a first electrode on the top surface and a second electrode on the bottom surface.

A laser device includes a laser configured to generate laser light and a laser control module configured to receive at least a portion of the laser light generated by the laser, to generate a control signal and to feed the control signal back to the laser for stabilizing the frequency, wherein the laser control module includes a tunable frequency discriminating element which is preferably continuously frequency tunable, and where the laser control module is placed outside the laser cavity.

An external resonator-type semiconductor laser device 1A includes an external resonator formed of one or a plurality of laser diode light sources and a VBG; an optical fiber which outputs output light La from the laser diode light source toward the VBG, and into which return light Lb from the VBG is input; and a displacement unit that displaces a disposition position of the VBG with respect to an input and output end surface of the optical fiber.