A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.

A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

A semiconductor optoelectronic system contains a primary semiconductor optoelectronic system, a first wavefront, a set of diffracting elements, and a second wavefront. The primary semiconductor electronic system is a single laser of a set of gain chips, bars, or stacks coherently coupled in an external resonator, the system is capable to generate a single vertical mode single lateral mode laser light. The near field on the first wavefront in the immediate vicinity of the system contains illuminated spots and dark spots, the latter dominate. The set of diffracting element transforms the near field of the laser light, and, hence, also the far field pattern, providing a significantly smaller beam divergence and, respectively, a higher brightness.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

A semiconductor laser element includes a light emitting layer, a transparent electrode, and a p-side semiconductor layer disposed between the light emitting layer and the transparent electrode in a first direction. The p-side semiconductor layer includes a flat portion and a protruding portion protruding from the flat portion toward the transparent electrode, the protruding portion extending in a second direction orthogonal to the first direction, the transparent electrode extends in the second direction, and orthogonal projection of the transparent electrode onto the light emitting layer is included in orthogonal projection of the protruding portion onto the light emitting layer.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

A laser system includes an edge emitting semiconductor laser, and an optical fiber, wherein the laser emits one or more laser beams coupled into the optical fiber and the laser includes a semiconductor body including a waveguide region that includes first and second waveguide layers and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region, a phase structure is formed in the semiconductor body, includes a cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer composed of a semiconductor material different from the material of the second cladding layer is embedded therein, and the cutout extends from the top side of the semiconductor body at least partly into the first intermediate layer.

A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.