A VCSEL includes a substrate, and an epitaxial VSCEL structure on the substrate. The epitaxial VSCEL structure includes a resonant cavity, including a gain region, disposed between a first reflector and a partially reflecting second reflector. At least one of the first or second reflectors includes a first sub-wavelength grating to provide spectral control for optical emission from the VCSEL. The first sub-wavelength grating can be operable to lock a wavelength of an optical beam for emission from the VCSEL substantially to a wavelength defined by the grating.

To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.

An electrically pumped photonic-crystal surface-emitting lasers with optical detector comprises plurality of air holes, by the variation of position and size proportion form a photonic crystal having main structure and sub structure, and produces an optical detection signal by light guiding proportion of the light guiding tunnel, further have power proportion of the laser by reading the strength of the optical detection signal, so the automatic power control circuit can feedback the power proportion for controlling the surface-emitting laser.

The invention relates to a device (2) for injecting spin-polarized electrons and for reflecting light, comprising at least one lattice structure (3) having a plurality of recesses (4), wherein the lattice structure (3) is designed to reflect the light, and wherein a respective injection contact (5, 6) for injecting spin-polarized electrons is arranged in at least some of the recesses (4).

A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and an electrode disposed at an opposite side to the substrate of the laminated structure, wherein the columnar parts have a light emitting layer, the columnar parts are disposed between the electrode and the substrate, light generated in the light emitting layer propagates through the plurality of columnar parts to cause laser oscillation, and the electrode is provided with a hole.

A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.

A light emitting device has a columnar portion including a light emitting layer, and: (ba)/L1>(dc)/L2; a<b; c<d; and a<d, where a is the columnar portion's maximum width as viewed in a laminating direction, at a first position of the columnar portion closest to the substrate in the laminating direction, b is the columnar portion's maximum width, at a second position of the light emitting layer closest to the substrate, c is the columnar portion's maximum width, at a third position of the light emitting layer farthest from the substrate, d is the columnar portion's maximum width, at a fourth position of the columnar portion farthest from the substrate, and L1 is a distance between the first and second positions and L2 is a distance between the third and fourth positions.

A VCSEL device includes a first electrical contact, a substrate, a second electrical contact, and an optical resonator arranged on a first side of the substrate. The optical resonator includes a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first and second reflecting structures, and a guiding structure. The guiding structure is configured to define a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position such that a first light emitting area is provided, to define at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position such that a second light emitting area is provided, and to reduce an intensity in between the at least two light-emitting areas during operation.

Provided is a metamaterial-based reflector including a first metamaterial layer including an array of first nanostructures, and a second metamaterial layer provided on the first metamaterial layer, the second metamaterial layer including an array of second nanostructures, wherein an arrangement of the second nanostructures is different from an arrangement the first nanostructures.

The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.