A surface-emitting semiconductor laser including: an active layer including a nitride semiconductor; a first semiconductor layer of a first electrical conduction type and a second semiconductor layer of a second electrical conduction type that are opposed to each other with the active layer therebetween; and a current confinement layer that is opposed to the active layer with the second semiconductor layer therebetween and has an opening, in which a side surface of the current confinement layer is inclined at at least a portion of a peripheral edge of the opening.

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.

A surface-emitting semiconductor laser includes a first emission region that outputs first light, and a second emission region that is provided separately from the first emission region, includes a phase shift section, and outputs second light. A far field pattern of the first light and a far field pattern of the second light are different from each other.

The embodiment relates to a surface emitting laser device and a light emitting device including the same.

The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively.

In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.

To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.

A surface-emitting laser includes a substrate, a lower reflector layer disposed on the substrate, an active layer disposed on the lower reflector layer, and an upper reflector layer disposed on the active layer. The lower reflector layer, the active layer, and the upper reflector layer form a mesa. The mesa has a current confinement structure. The current confinement structure includes a current confinement layer. The current confinement layer includes an oxide layer extending from a periphery of the mesa and an aperture surrounded by the oxide layer. The aperture overlaps the active layer. The aperture has a major axis and a minor axis. A length of the major axis is twice or more a length of the minor axis.

An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.