Provided are light sensing systems and electronic apparatuses including the light sensing systems. The light sensing system includes a light source unit having a slit-shaped opening and configured to emit light through a slit-shaped opening; and a lens integrated with the light source unit on a surface of the light source unit on which the slit-shaped opening is formed. The lens is configured to make light emitted through the slit-shaped opening into a point light source at a far-field.

A surface emitting laser includes a semiconductor substrate, a resonance portion that is disposed over the semiconductor substrate and that emits light, an insulating layer disposed in a side face of the resonance portion, and a coating film covering the resonance portion and the insulating layer, wherein a portion disposed in a side face of the insulating layer of the coating film is constituted by an atomic layer deposition film.

A semiconductor optical amplifier includes: a light source part that is formed on a substrate, the substrate including a substrate surface; and an optical amplification part that amplifies propagation light propagating in a predetermined direction from the light source part and that emits the propagation light amplified in an emission direction intersecting with the substrate surface, the optical amplification part including a conductive region extending in the predetermined direction from the light source part along the substrate surface and a non-conductive region formed on a periphery of the conductive region, the conductive region including a reflection part that reflects the propagation light in a direction intersecting with the predetermined direction when viewed from a direction vertical to the substrate surface.

Provided is an elliptical multi-mesa laser structure, including a substrate layer, an N-DBR, a functional layer and a P-DBR sequentially arranged from bottom to top. The substrate layer is fixedly connected with an N contact layer. The N-DBR is fixedly connected to a top of the substrate layer, and the N contact layer is arranged around the N-DBR. A space layer is inserted in the N-DBR. The functional layer is fixedly connected to a top of the N-DBR. The P-DBR is fixedly connected to a top of the functional layer, and a top of the P-DBR is fixedly connected with a P contact layer. Another space layer is inserted into the P-DBR.

A surface emitting laser element includes a first reflecting mirror; an active layer over the first reflecting mirror; a second reflecting mirror over the active layer; and a multilayer film over the second reflecting mirror. The multilayer film has a side surface including one film and inclined with respect to a principal surface of the second reflecting mirror. The multilayer film includes, in a thickness direction, two or more pairs of a first film having a first refractive index and a second film having a second refractive index higher than the first refractive index. The multilayer film has a center portion and a peripheral portion around the center portion in plan view in a direction perpendicular to the principal surface. The peripheral portion includes the side surface.

A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

A vertical cavity surface-emitting laser including: a substrate having a main surface; and a post structure mounted on the main surface. The post structure includes an active layer and a carrier confinement structure. The carrier confinement structure includes a first region and a second region having a higher resistivity than the first region. The first region has an edge, and a first to a third reference line segments. A first length of the first reference line segment is longest among lengths of line segments joining any two points on the edge and extending in a [1-10] direction of the III-V group semiconductor. The first length is greater than a sum of a second length of the second reference line segment and a third length of the third reference line segment. The third length is smaller than the second length and is zero or more.

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than 140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

Provided are light sensing systems and electronic apparatuses including the light sensing systems. The light sensing system includes a light source unit having a slit-shaped opening and configured to emit light through a slit-shaped opening; and a lens integrated with the light source unit on a surface of the light source unit on which the slit-shaped opening is formed. The lens is configured to make light emitted through the slit-shaped opening into a point light source at a far-field.

Provided is an elliptical multi-mesa laser structure, including a substrate layer, an N-DBR, a functional layer and a P-DBR sequentially arranged from bottom to top. The substrate layer is fixedly connected with an N contact layer. The N-DBR is fixedly connected to a top of the substrate layer, and the N contact layer is arranged around the N-DBR. A space layer is inserted in the N-DBR. The functional layer is fixedly connected to a top of the N-DBR. The P-DBR is fixedly connected to a top of the functional layer, and a top of the P-DBR is fixedly connected with a P contact layer. Another space layer is inserted into the P-DBR.