A surface-emitting laser includes a substrate, a lower DBR layer, a cavity layer, and an upper DBR layer stacked in order. The lower DBR layer has a first DBR layer, a contact layer, and a second DBR layer. The first and second DBR layers each include alternating first and second semiconductor layers containing aluminum, with the second layers having higher aluminum composition. The second DBR layer includes 12 to 20 pairs of layers. The cavity layer includes spacer layers and a quantum well light-emitting layer, with specified aluminum compositions to optimize optical confinement. The contact layer has an aluminum composition of 0.2 or less. The second DBR layer uses n-type material; the upper DBR layer uses p-type material and an oxide confinement layer. The laser forms a mesa structure with sidewall angles between 70 and 80. This structure enables improved optical confinement, efficient carrier injection, and enhanced laser performance.