The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

Disclosed herein is a system comprising: an optical system with a focal plane; an apparatus at the focal plane; a filter; wherein the apparatus comprises an array of vertical-cavity surface-emitting lasers (VCSELs) on a first substrate and an array of detectors on a second substrate, the detectors configured to detect laser beams that are emitted by the VCSELs and backscattered by an object; wherein the first substrate is mounted to the second substrate and is configured to allow the laser beams that are emitted by the VCSELs and backscattered by the object to transmit through the first substrate and reach the detectors; wherein the filter is configured to prevent light other than the laser beams from passing.

A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on the transparent electrode in the recess of the p-electrode.

An apparatus comprises an array of vertical-cavity surface-emitting lasers (VCSELs) on a first substrate and an array of detectors on a second substrate, the detectors being configured to detect laser beams emitted by the VCSELs and backscattered by an object, wherein the first substrate is mounted to the second substrate and is configured to allow the laser beams emitted by the VCSELs and backscattered by the object to transmit through the first substrate and reach the detectors.

An optoelectronic apparatus includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure. One or more tunnel junctions (TJ) are provided. One or more apertures are provided with the selected shape structure. One or more buried tunnel junctions (BTJ) or oxide confine the apertures, additional TJ's, planar structures and or additional BTJ's 28 created during a regrowth process that is independent of a first growth process. A VCSEL output is determined in response to an application of the VCSEL laser. The VCSEL laser includes an HCG grating and a bottom DBR. A user monitoring device that includes the VCSEL. A cylindrical lens has a cylinder axis. An optical element (DOE) projects the light emitted by the elements to generate a pattern of stripes corresponding to the columns of the grid pattern.

The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

A device comprises a substrate, a sacrificial material layer over the substrate, a first solid-state material layer over the sacrificial layer, a dielectric layer over solid-state material layer, and a second solid-state material layer over the dielectric layer. The sacrificial material layer may have an airgap, the solid-state material layer may comprise a structure over the airgap and may be separated from a bulk portion of the first material layer by trenches, where the trenches extend to the airgap.

Vertical-cavity surface-emitting laser (VCSEL) structures are described which enable their use as widely wavelength-swept coherent light sources and multiple-wavelength VCSEL arrays. Three general configurations are described: (a) a semiconductor-cavity-dominant (SCD) with high reflection at the semiconductor-air interface, (b) an extended-cavity (EC) design in which reflections at the semiconductor-air interface is reduced to insignificance compared to the SCD design with a refractive index-matched layer (i.e., AR layer) so the entire structure resonates as one cavity, and (c) an air-cavity-dominant (ACD) design which facilitates a larger field confinement in the air gap, and the increased field confinement causes the air gap to be the dominant cavity.

A high contrast grating optoelectronic apparatus includes an optoelectronic device at a front surface of a substrate. The optoelectronic device is to one or both of emit light and detect light through a back surface of the substrate opposite the front surface. A high contrast grating (HCG) lens is adjacent to and spaced apart from the back surface of the substrate by a spacer. The spacer includes one or both of a wafer-bonded substrate and a cavity. The HCG lens is to focus the light.

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.