In some implementations, an emitter device includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include a first mirror, a second mirror, and an active layer between the first mirror and the second mirror. The epitaxial layers may include at least one oxidation layer including a first oxidized region and a second oxidized region separate from the first oxidized region. The first oxidized region and the second oxidized region may be configured to provide a strain on the epitaxial layers that is radially asymmetric. The epitaxial layers may include a set of oxidation trenches in the set of epitaxial layers to expose the at least one oxidation layer.

A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.

Provided is an optical modulator including a plurality of unit cells, an active layer including a plurality of refractive index changing areas that are separated from each other, each of the plurality of refractive index changing areas having a refractive index that changes based on an electrical signal applied thereto, a plurality of antenna patterns provided over the active layer, and a mirror layer provided under the active layer opposite to the plurality of antenna patterns.

Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

Provided is an optical modulator including a plurality of unit cells, an active layer including a plurality of refractive index changing areas that are separated from each other, each of the plurality of refractive index changing areas having a refractive index that changes based on an electrical signal applied thereto, a plurality of antenna patterns provided over the active layer, and a mirror layer provided under the active layer opposite to the plurality of antenna patterns.

A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.

The present embodiment relates to a light-emitting device comprising a reflective metasurface modulating a phase for each of pixels constituting a one- or two-dimensional array. The light-emitting device comprises a surface emitting laser element, a light guide layer, and the metasurface. The metasurface has a light transmissive layer including a dielectric layer, one metal film on one surface thereof, and the other metal film on the other surface thereof. In each of unit regions corresponding to the pixels, the light transmissive layer includes a portion exposed without being covered with the metal film. The width of each unit region and the thickness of the light transmissive layer are smaller than the wavelength of the laser light to the metasurface. The metasurface modulates the phase of the laser light for each unit region. A first light output surface outputs the modulated laser.

The embodiment relates to a surface emitting laser package and a light emitting device including the same.

The surface-emitting laser package according to the embodiment may include a housing including a cavity, a surface-emitting laser device disposed in the cavity, and a diffusion unit disposed on the housing. The diffusion unit may include a polymer layer and a glass layer disposed on the polymer layer. The polymer layer may include a first polymer layer vertically overlapping the surface emitting laser device, and a second polymer layer not vertically overlapping the surface emitting laser device. The thickness of the first polymer layer may be thinner than the thickness of the second polymer layer.

A surface-emitting laser includes an output unit. The output unit has an oblong-shaped VCSEL (vertical-cavity surface-emitting laser) structure. The output unit operates in an oscillation state in which a current that is larger than the oscillation threshold value is injected. The output unit receives a coherent seed light via a coupling surface at one end of the VCSEL structure in the longitudinal direction thereof. The seed light thus received propagates as a slow light through the VCSEL structure in the longitudinal direction thereof while being reflected multiple times in the vertical direction within the VCSEL structure. An output light is extracted from the upper surface of the VCSEL structure.

According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.