A vertical cavity surface emitting laser (VCSEL) including a substrate and a bottom distributed Bragg reflector (DBR) having a plurality of layers deposited on the substrate. The VCSEL also includes a first charge confining layer deposited on the bottom DBR, an active region deposited on the first charge confining layer, and a second charge confining layer deposited on the active region. A current blocking layer is provided on the second charge confining layer, and a top epitaxial DBR including a plurality of top epitaxial DBR layers is deposited on the current blocking layer. A top electrode is deposited on the top epitaxial DBR, a bottom electrode is deposited on the bottom DBR and adjacent to the active region, and a top dielectric DBR is deposited on the top epitaxial DBR and the top electrode.

A vertical cavity surface emitting laser includes an active area, an inner trench, an outer trench, and a first implantation region. The active area includes a first mirror, an active region, a second mirror, and an etch stop layer. The first mirror is formed over a substrate. The active region is formed over the first mirror. The second mirror is formed over the active region. The etch stop layer with an aperture is formed between the active region and the second mirror. The inner trench surrounds the active area in a top view. The outer trench if formed beside the inner trench. The first implantation region is formed below the inner trench.

A high-speed, single-mode, high power, reliable and manufacturable wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm, including a vertical cavity laser (VCL), the VCL having a gain region with at least one compressively strained quantum well containing Indium, Gallium, and Arsenic.

A surface-emitting laser array and a laser device including the surface-emitting laser array. The surface-emitting laser array includes a layered product including a lower reflecting mirror having two layers with different refractive indexes, an upper reflecting mirror, and an active layer disposed between the lower reflecting mirror and the upper reflecting mirror, a first separation trench from which the upper reflecting mirror, the active layer, and the lower reflecting mirror are removed, the first separation trench separating the surface-emitting laser array from an adjacent chip, and a second separation trench disposed between the first separation trench and a light-emitting unit that emits a laser beam, the second separation trench having a prescribed depth.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A Vertical Cavity Surface Emitting Laser (VCSEL) includes a layer stack of semiconductor layers having a first layer sub-stack forming a mesa, and a second layer sub-stack adjacent to the mesa in a stacking direction. Layers of the second layer sub-stack extend beyond layers of the first sub-stack in a direction perpendicular to the stacking direction. The semiconductor layers of the layer stack form an optical resonator having a first mirror, a second mirror, an active region between the first and second mirrors for laser light generation, and an oxide aperture layer forming a current aperture. The oxide aperture layer is made from Al.sub.1-xGa.sub.xAs with 0≤x≤0.05. The oxide aperture layer is a last layer of the mesa and immediately adjacent to a first layer of the second layer sub-stack. A first layer of the second layer sub-stack is a contact layer.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

A method of fabricating vertical cavity surface emitting laser, comprising: providing a first substrate formed with a dielectric DBR and a first bonding layer, and a second substrate formed with a etch-stop layer, a heavily doped layer, an active region, a current-confinement layer, and an arsenide DBR firstly, then sticking a third substrate on the arsenide DBR, then removing the second substrate and the etch-stop layer, next bonding the heavily doped layer to the dielectric DBR, next removing the third substrate, finally forming a p-type electrode contact and an n-type electrode contact.

Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

A vertical-cavity surface-emitting laser includes a substrate. A first mirror is disposed on the substrate. An active layer is disposed on the first mirror. An oxide layer is disposed on the active layer. An aperture is disposed on the active layer. The aperture is surrounded by the oxide layer. A second mirror is disposed on the aperture and the oxide layer. A high-contrast grating is disposed on the second mirror. The high-contrast grating includes a first grating element and a second grating element, and the first grating element and the second grating element are spaced apart from each other with an air gap therebetween. A passivation layer is disposed on the high-contrast grating. A first thickness of the passivation layer on a top surface of the first grating element is greater than a second thickness of the passivation layer on a first sidewall of the first grating element.