Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

The present disclosure relates to methods and apparatuses for improving tolerances of in-plane optical alignment of optical interconnects. An example method includes depositing a first reflector with a first spectral reflectivity on an end of an optical fiber, coupling a laser to another end of the optical fiber, changing a spectral reflectivity of a region of the first reflector adjacent to the end of a core of the optical fiber from the first spectral reflectivity by exposure to the laser, resulting in a first reflector with multiple regions of spectral reflectivity, and coupling the first reflector to an integrated unit comprising an optical cavity deposited on a second reflector.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A method of fabricating vertical cavity surface emitting laser, comprising: providing a first substrate formed with a dielectric DBR and a first bonding layer, and a second substrate formed with a etch-stop layer, a heavily doped layer, an active region, a current-confinement layer, and an arsenide DBR firstly, then sticking a third substrate on the arsenide DBR, then removing the second substrate and the etch-stop layer, next bonding the heavily doped layer to the dielectric DBR, next removing the third substrate, finally forming a p-type electrode contact and an n-type electrode contact.

Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

The invention relates to a LASER amplification module for a solid-state laser system and method for manufacturing thereof. The present invention relates to a laser amplification module for a solid-state laser. More particularly, the present invention relates to the module amplifying laser beam capable to provide effective cooling of a heat sink bonded to a solid-state disk. The monolithic laser amplification module (1) comprises a solid-state disk (2); a monolithic composite (6) comprising a heat sink (3) and a reflecting coating (4) configured to at least partially reflect an incident beam (5) propagated in the solid-state disk (2) in a wavelength range λ from 200 nm-10 μm, wherein the reflecting coating (4) is deposited on surface of the heat sink by a deposition method, wherein the heat sink (3) has: transverse thermal conductivity at least 100 W/m*K, Young's modulus at least 100 GPa, preferably at least 300 GPa; and thickness of the heat sink at least 1 mm, preferably at least 2 mm; and wherein the solid-state disk and the monolithic composite have surfaces (61 and 21) having PV-flatness<210 nm and have a surface roughness RMS<2 nm; and wherein the surfaces (21 and 61) of the solid-state disk (2) and the monolithic composite (6) are directly and permanently bonded together.

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.