Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between. The phosphor layer is disposed between the first reflecting mirror and the first reflecting layer, and performs wavelength conversion on light leaking from the first reflecting mirror.

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Provided are light sensing systems and electronic apparatuses including the light sensing systems. The light sensing system includes a light source unit having a slit-shaped opening and configured to emit light through a slit-shaped opening; and a lens integrated with the light source unit on a surface of the light source unit on which the slit-shaped opening is formed. The lens is configured to make light emitted through the slit-shaped opening into a point light source at a far-field.

One embodiment may provide a light source module including: a light source part including at least one vertical cavity surface-emitting laser, which is configured to transfer light through N (N being a natural number equal to or greater than 1) apertures; at least one collimator lens through which light emitted from the light source part passes; and a driving device configured to make the collimator lens move, wherein the at least one vertical cavity surface-emitting laser comprises divided regions, and an intensity of a beam is controlled according to a predetermined far-distance mode or near-distance mode.

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure.

A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.

An opto-electronic device has a backside Vertical Cavity Surface Emitting Laser (VCSEL) device. An optical component is formed on a rear surface of the backside VCSEL device.

A laser assembly, such as a flood illuminator, has laser (e.g., VCSEL) emitters on a substrate configured to emit optical signals. An optic structure of optically transparent material, such as a polymer, is formed directly on the substrate, and micro-optic elements are nano-imprinted on the optic structure. The micro-optic elements are arranged in optical communication with the optical signals emitted from the laser emitters to perform field mapping or other optical functions. The laser emitters are on the same surface of the substrate as the optic structure along with electrical contacts so forming the optic structure involves covering the electrical contacts with a protective layer, dispensing a polymer for the optic structure, cutting away portions of the optic structure, removing the remaining protective layer, and exposing the electrical contacts.

This disclosure provides methods and apparatuses for sorting target particles. In various embodiments, the disclosure provides a cassette for sorting target particles, methods for sorting target particles, methods of loading a microchannel for maintaining sample material viability, methods of quantifying sample material, and an optical apparatus for laser scanning and particle sorting.