A solid-state laser radar, including: a plurality of emission modules, each emission module including at least one light-emitting unit, and the light-emitting unit including a plurality of lasers configured to emit detection beams at the same time; and a receiving module, including at least one detection unit, the detection unit including a plurality of photodetectors configured to receive echoes, reflected by a target object, of the detection beams, the plurality of emission modules are disposed around the receiving module, the light-emitting units of the plurality of emission modules are located on a same plane, and one detection unit is configured to receive echoes, reflected by the target object, of the detection beams emitted by the light-emitting units of the plurality of emission modules. For a set range of field angles, the lengths of the light-emitting units emitting light simultaneously are greatly reduced by providing the plurality of emission modules.

A light emitting device includes: a substrate; a laminated structure that is provided on the substrate and that includes a plurality of columnar portions; and an electrode provided at an opposite side of the laminated structure from the substrate. The columnar portion includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from that of the first semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. The electrode is connected to the second semiconductor layers in the plurality of columnar portions, and includes a first electrode layer formed of a material that has a work function smaller than that of the second semiconductor layer, and a second electrode layer that is connected to the first electrode layer and that has a work function smaller than that of the first electrode layer. An interface between the first electrode layer and the second electrode layer has an uneven shape.

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure.

A method for manufacturing includes fabricating an array (22) of vertical emitters (32) by deposition of multiple epitaxial layers on a III-V semiconductor substrate (20), and fabricating control circuits (30) for the vertical emitters on a silicon substrate (26). Respective front sides (52) of the vertical emitters are bonded to the silicon substrate in alignment with the control circuits. After bonding the respective front sides, the III-V semiconductor substrate is thinned away from respective back sides (50) of the vertical emitters, and metal traces (78) are deposited over the vertical emitters to connect the vertical emitters to the control circuits.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

[Object] To provide a vertical cavity surface emitting laser device having a concave mirror structure and excellent polarization controllability.

[Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer, and is disposed between the first light-reflecting layer and the second light-reflecting layer. The stacked body has a current confinement structure for confining a current and forming a current injection region where a current concentrates. The first light-reflecting layer includes a concave mirror having a concave surface on a side of the stacked body and a convex surface on a side opposite to the stacked body. A first figure and a second figure are not similar, the first figure being a plane figure of the current injection region when viewed from an optical axis direction of emitted light, the second figure being a plane figure of a contour line when viewed from the optical axis direction, the contour line representing a height of the concave mirror from the active layer.

Provided are light sensing systems and electronic apparatuses including the light sensing systems. The light sensing system includes a light source unit having a slit-shaped opening and configured to emit light through a slit-shaped opening; and a lens integrated with the light source unit on a surface of the light source unit on which the slit-shaped opening is formed. The lens is configured to make light emitted through the slit-shaped opening into a point light source at a far-field.

[Object] To provide a laser device that has a concave mirror structure and exhibits excellent optical characteristics, a laser device array, and a method of producing the laser device.

[Solving Means] A laser device according to the present technology includes: a first light-reflecting layer; a second light-reflecting layer; and a stacked body. The stacked body includes an active layer, a lens being provided on a first surface on a side of the first light-reflecting layer. The lens has a lens shape protruding toward a side of the first light-reflecting layer with a first direction as a longitudinal direction and a second direction as a lateral direction, a central portion of the lens in the first direction having a first width that is the shortest width along the second direction, a non-central portion of the lens in the first direction having a second width that is the largest width along the second direction, the lens having a shape in which a height thereof is uniform or the central portion is higher than an end portion, a radius of curvature of an apex of the lens in the second direction being uniform. The first light-reflecting layer is stacked on the first surface to form a concave mirror having a concave surface shape on the lens.

A light emitting element array includes: a light emitting element group that includes plural light emitting elements; and plural lenses that are provided, corresponding to the plural light emitting elements, on a light emitting surface side of the plural light emitting elements, and that deflects light emitted from the plural light emitting elements according to a positional relation with the plural light emitting elements. Distances between central axes of light emission of the plural light emitting elements and central axes of the plural lenses corresponding to the plural light emitting elements increase from a center side of the light emitting element group toward an end side of the light emitting element group, and a degree of change in the distances decreases from the center side of the light emitting element group toward the end side of the light emitting element group.

A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.