A structure light module comprises: a VCSEL substrate comprising a VCSEL array comprising a plurality of individual VCSELs; a first spacer disposed on the VCSEL substrate; a wafer level lens comprising a glass substrate and at least a replicated lens on a first surface of the glass substrate disposed on the first spacer; a second spacer disposes on the wafer level lens; a DOE disposed on the second spacer, where a structure light is projected from the DOE on a target surface for 3D imaging.

A vertical cavity surface emitting laser (VCSEL) and a method for fabricating the same are provided. The VCSEL includes an epitaxial laminate, a lower electrode layer, an upper electrode layer and a current spreading layer. The epitaxial laminate at least includes a first reflector, a second reflector, and an active layer disposed therebetween for generating an initial laser beam. The upper and lower electrode layers jointly define a current path passing through the active layer, and the upper electrode layer has an aperture for defining a light-emitting region. The current spreading layer disposed on the second reflector and electrically connected to the upper electrode layer includes a plurality of beam splitting structures positioned at a light emergent side thereof, and the beam splitting structures is located in the aperture so that the initial laser beam is divided into a plurality of sub-beams.

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an epitaxial material comprising a mesa structure in combination with an electrical waveguide, wherein the mesa structure comprises a plurality of laser regions within the mesa structure itself, each laser region of the mesa structure being electrically isolated within the mesa structure itself relative to the other laser regions of the mesa structure.

Mapping apparatus includes a transmitter, which is configured to emit at least one beam including a sequence of pulses of light toward a plurality of points in a scene. A receiver is configured to receive the light reflected from the scene and to generate an output indicative of a time of flight of the pulses to and from the points in the scene. A processor is coupled to process the output of the receiver so as to generate a 3D map of the scene, while controlling a power level of the pulses emitted by the transmitter responsively to a level of the output from the receiver in response to one or more previous pulses.

A surface-emitting laser according to one embodiment of the technology includes a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer of the second conductivity type, and a light output surface in this order. The laser element section further includes an electrode that injects a current into the active layer.

Methods, devices and systems are described for selectively illuminating different zones of a field of view by a multi-zone illumination device. In one aspect, a multi-zone illuminator may include a plurality of vertical cavity surface emitting lasers (VCSELs), and a plurality of micro-optical devices aligned with apertures of individual or groups of VCSELs, which are configured to be individually activated to provide adjustable illumination to different zones of a field of view of an image sensor. In another aspect, a method of selective illumination may include receiving information specifying a field of view of a camera, and controlling at least two sub arrays or individual illuminators of an illuminating array to output light at independently adjustable illumination powers, wherein each of the at least two sub arrays are independently configurable to illuminate at least one of a plurality of separate zones corresponding to the field of view of the camera.

To provide a semiconductor light-emitting device that has excellent productivity and is capable of aligning a current injection region and a lens with high accuracy, and a method of producing the semiconductor light-emitting device. A method of producing a light-emitting device according to the present technology includes: forming a light-blocking structure that is a structure opaque to an exposure wavelength on a side of a first main surface of a substrate having the first main surface and a second main surface on a side opposite to the first main surface; forming a photosensitive layer that is formed of a photosensitive material on a side of the second main surface of the substrate; applying light having the exposure wavelength to the substrate from the side of the first main surface and forming the photosensitive layer into a pattern corresponding to the light-blocking structure; and forming a lens using the photosensitive layer.

A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.

A laser arrangement includes a laser array including a plurality of Vertical Cavity Surface Emitting lasers and an optical structure including a diffuser arranged to change a distribution of the laser light. The optical structure is configured to transform the laser light to transformed laser light such that an overlap of the emission cones of at least a group of the plurality of lasers is increased in field-of-view in comparison to perfectly collimated laser light diffused to a flat-top intensity profile in the field-of-view. The optical structure is arranged to redirect the laser light emitted at angles of the emission cone to the field-of-view so as to increase the overlap of the emitted laser light in the field-of-view. The optical structure is also configured to provide a slope angle ? of an intensity profile along a direction of the field-of-view that is smaller than a divergence angle of the laser.

An optical device may include a semiconductor laser chip to independently generate four laser beams at different wavelengths. Each laser beam, of the four laser beams, may be directed to a respective optical output of the optical device with a sub-micron level of tolerance of each laser beam relative to the respective optical outputs of the optical device, and each laser beam, of the four laser beams, may be associated with a different optical path from the semiconductor laser chip to the respective optical output of the optical device. The optical device may include a lens to receive each of the four laser beams. The lens may be positioned to direct each laser beam, of the four laser beams, toward the respective optical output of the optical device. The optical device may include an optical isolator to receive each of the four laser beams.