A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

A VCSEL package including a VCSEL, a housing, containing the VCSEL, and a diffuser operably attached to the housing and configured to receive an emitted beam of light from the VCSEL and produce a beam of predetermined angular divergence. The housing may be a PLLC package, a ceramic package, or a TO-style package. The diffuser could be a substantially planar diffuser sheet, which in some cases may be comprised of glass or plastic. In some embodiments, the diffuser could be a diffractive optical element or holographic light shaping diffuser. In some embodiments, the diffuser can be designed to produce a beam with an illumination full angle of up to about 90 degrees.

The present disclosure relates to novel and advantageous VCSELs and VCSEL arrays. In particular, the present disclosure relates to novel and advantageous VCSELs and VCSEL arrays having, or patterned in, unique shapes, including rectangular shapes, linear shapes, shapes having two or more segments, and other non-circular shapes. Additionally, VCSELs and VCSEL arrays of the present disclosure may be combined with optical elements. In some embodiments, optical elements may be monolithically integrated on the VCSEL dies, or may be monolithically integrated on standoff pedestals arranged on the VCSEL dies.

The invention describes a light emitting device (100). The light emitting device (100) comprises at least one light emitting structure (110), at least one processing layer (120) and at least one optical structure (130). The optical structure (130) comprises at least one material processed by means of processing light (150). The at least one processing layer (120) is arranged to reduce reflection of the processing light (150) in a direction of the optical structure (130) at least by 50%, preferably at least by 80%, more preferably at least by 95% and most preferably at least by 99% during processing of the material by means of the processing light (150). It is a basic idea of the present invention to incorporate a non- or low-reflective processing layer (120) on top of a light emitting structure (110) like a VCSEL array in order to enable on wafer processing of light emitting structures (130) like microlens arrays. The invention further describes a method of manufacturing such a light emitting device (100).

A surface emitting device according to an embodiment of the present disclosure includes: a first reflective layer; a first semiconductor layer of a first conductive type, the first semiconductor layer being stacked on the first reflective layer; an active layer stacked on the first semiconductor layer; a second semiconductor layer of a second conductive type that is a conductive type opposite to the first conductive type, the second semiconductor layer being stacked on the active layer; a tunnel junction layer stacked on the second semiconductor layer; a third semiconductor layer of the first conductive type, the third semiconductor layer being stacked on the tunnel junction layer; a second reflective layer stacked on the third semiconductor layer, at a side opposite to a side of the first reflective layer; a dielectric layer formed, through non-selective oxidation, between the second semiconductor layer and the third semiconductor layer or between the third semiconductor layer and the second reflective layer, the dielectric layer having an aperture penetrating through in a thickness direction; and a fourth semiconductor layer stacked, within the aperture, on the second semiconductor layer or the third semiconductor layer and formed through selective growth of the second semiconductor layer or the third semiconductor layer.

To provide a surface-emitting laser that can achieve further reduction of diffraction loss, further improvement of heat dissipation, further improvement of yield, and further improvement of reliability.

To provide a surface-emitting laser including a substrate and a vertical resonator structure formed on the substrate, in which the vertical resonator structure includes at least one element selected from the group consisting of In, Ga, Al, N, As, and P, and includes at least an active layer, an upper DBR layer, a lower DBR layer, the upper DBR layer and the lower DBR layer are formed with the active layer interposed therebetween, and the lower DBR layer includes at least one transparent conductive layer that contains a transparent conductive material including a non III-V semiconductor.

The present invention relates to a Vertical-Cavity Surface-Emitting Laser (VCSEL) die comprising a VCSEL array configured for flip chip bonding to a substrate with the VCSEL array being designed for emission from a substrate side of the chip, integrated beam shaping optics and electrical contacts including a top surface contact and an etched metal connection through a top mirror structure to a bottom n-mirror, or to an n-doped buffer layer under the bottom n-mirror or to the substrate. The invention further relates to an assembly comprising the above VCSEL die and a photodetector in which the VCSEL die is attached to a circuit board or sub-mount with a solder or bump bonds on the VCSEL die and the photodetector is placed on a same circuit board or sub-mount right next to the VCSEL die.

A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.

A surface-emitting laser according to one embodiment of the technology includes a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer of the second conductivity type, and a light output surface in this order. The laser element section further includes an electrode that injects a current into the active layer.

A VCSEL array device formed of an array of raised VCSELs on an electrical contact and raised inactive regions connected to the electrical contact. The VCSELs can be physically and/or electrically organized to improve power or speed, or in phase and in parallel. The VCSELs and inactive regions are positioned between the electrical contact and an electrical waveguide. The VCSELs may be separated into subarrays and each VCSEL may be covered with an integrated or bonded microlens for directing beams of light without external lenses. The VCSELs may also be electrically selected to form two or more groups, with beams of light from each group have unique divergences, unique power or unique optical power, and each beam of light in a group forming a spot at a point on a line, on the same optical axis, or as part of a pattern.