A method of forming an optical structure in a semiconductor substrate includes applying a layer of photoresist on a surface of the semiconductor substrate, exposing the photoresist with exposure light, and subsequently developing the photoresist. After developing, a remaining layer of the photoresist has a photoresist relief profile. The method further includes etching the photoresist and the semiconductor substrate to transfer the photoresist relief profile into the semiconductor substrate to obtain the optical structure in one or more first sub-areas and a support structure in one or more second sub-areas. A thickness of the layer of the photoresist applied to the surface of the semiconductor substrate is greater than a product of a maximum height difference of a relief profile of the optical structure and a ratio between etch rates of the photoresist and of the semiconductor substrate.

The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface that is anisotropic, wherein the ROC comprises four directions, the four directions being +x, +y, x, y, the ROC in at least one direction is in a range greater than a cavity length of the VCSEL and less than a predefined ROC value for a standard beam width (ROCUL), and the ROC in at least one of the other directions is outside the range.

A light emitting device includes: a first base; a first outer cap, which is disposed on the first base and includes a first opening region; a first optical lens, which is disposed in the first opening region and has a source-side surface and an object-side surface, wherein the source-side surface includes a plurality of spherical surface bodies; and an infrared light source, which is disposed on the first base, wherein the light of the infrared light source passes through the spherical surface bodies on the source-side surface of the first optical lens, so as to cause the light to produce a predetermined shape.

A semiconductor surface-emitting laser array can be provided with a group of independently addressable light-emitting pixels arranged in at least two rows and in a linear array on a common substrate chip and including a common cathode and a dedicated channel associated with an address trace line for each pixel. An aggregate linear pitch can be achieved between pixels of the at least two rows along the linear array in a cross process direction that is less than the size of a pixel. The semiconductor laser array can include more than one common substrate chip tiled and stitched together in a staggered arrangement to provide an at least 11-inch wide, 1200 dpi imager with timing delays associated with each of the more than one common substrate chip in the staggered arrangement.

A laser assembly, such as a flood illuminator, has laser (e.g., VCSEL) emitters on a substrate configured to emit optical signals. An optic structure of optically transparent material, such as a polymer, is formed directly on the substrate, and micro-optic elements are nano-imprinted on the optic structure. The micro-optic elements are arranged in optical communication with the optical signals emitted from the laser emitters to perform field mapping or other optical functions. The laser emitters are on the same surface of the substrate as the optic structure along with electrical contacts so forming the optic structure involves covering the electrical contacts with a protective layer, dispensing a polymer for the optic structure, cutting away portions of the optic structure, removing the remaining protective layer, and exposing the electrical contacts.

A light-emitting device includes: a light source including plural light-emitting elements; a first optical member that is provided in a light-emitting path of the light source, the first optical member being configured to reduce intensity of light emitted from the light source and emit the light; and a second optical member that is provided on a light-emitting side of the first optical member and is configured to diffuse and irradiate light incident from the first optical member.

Disclosed herein are single element dot pattern projectors with a meta-optics. The projectors include a laser light source and a metasurface chip integrated onto the laser light source. The metasurface chip includes metasurface elements spaced apart from the laser light source by a distance equal to the collimating function focal length of the metasurface chip. the laser light source produces light which is diffracted through the metasurface elements to produce a dot pattern. Projectors enabled by meta-optics lead to unique methods of integrating the meta-optic and unique functionality that can be added to the dot pattern.

A light-emitting element includes: a laminated structure body which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer including a first surface and a second surface that is opposed to the first surface, an active layer that faces the second surface of the first compound semiconductor layer, and a second compound semiconductor layer including a first surface that faces the active layer and a second surface that is opposed to the first surface are laminated; a first light reflection layer that is provided on the first surface side of the first compound semiconductor layer; and a second light reflection layer that is provided on the second surface side of the second compound semiconductor layer. The first light reflection layer includes a concave mirror portion, and the second light reflection layer has a flat shape.

A light-emitting device includes: a light-emitting element array including a plurality of light-emitting elements arranged; and a dummy concave mirror section surrounding the light-emitting element array, and the light-emitting elements each include a stacked structure including a stack of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, a first light reflection layer formed on a base part surface, and a second light reflection layer. A first convex part is formed in a portion of the base part surface in which the first light reflection layer functioning as a concave mirror is formed, with respect to a second surface of the first compound semiconductor layer, and a second convex part is formed in a portion of an extending part of the base part surface in which the dummy concave mirror section is formed, with respect to the second surface of the first compound semiconductor layer.

In some implementations, an optical system includes an emitter array including a plurality of emitters. The plurality of emitters are arranged in a plurality of channels and the emitter array is configured to illuminate on a per-channel basis. Respective positions of emitters, of the plurality of emitters, of a channel, of the plurality of channels, vary across a width of the channel. The optical system includes a lens to receive light from the emitter array and a diffuser to receive light from the lens. The diffuser is configured to diffuse light along a length of the plurality of channels of the emitter array. The optical system includes a corrective optical element to receive light from the diffuser.