A semiconductor vertical resonant cavity light source includes an upper and lower mirror that define a vertical resonant cavity. An active region is within the cavity for light generation between the upper and lower mirror. At least one cavity spacer region is between the active region and the upper mirror or lower mirror. The cavity includes an inner mode confinement region and an outer current blocking region. An index guide in the inner mode confinement region is between the cavity spacer region and the upper or lower mirror. The index guide and outer current blocking region each include a lower and upper epitaxial material layer thereon with an epitaxial interface region in between. At least a top surface of the lower material layer includes aluminum in the interface region throughout a full area of an active part of the vertical light source.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

A light source includes a substrate with a first surface and an opposite second surface. An epitaxial layer is positioned on the first surface of the substrate. The light source also includes at least one light generator in the epitaxial layer positioned such that an optical signal transmitted thereby is directed toward the substrate. A diffuser is positioned on the second surface of the substrate, and at least one monitor photodetector is positioned in the epitaxial layer in an arrangement configured to receive a portion of the optical signal which is reflected by the diffuser. In one form, the light generator may include a vertical cavity surface emitting laser (VCSEL).

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure includes a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The second reflector has an opening extending from a second surface of the second reflector into the second reflector by a predetermined depth. Etching into the second reflector to the predetermined depth reduces the photon lifetime and the threshold gain of the VCSEL, while increasing the modulation bandwidth and maintaining the high reflectivity of the second reflector. Thus, etching the second reflector to the predetermined depth provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot.

A laser arrangement includes a laser array including a plurality of Vertical Cavity Surface Emitting lasers and an optical structure including a diffuser arranged to change a distribution of the laser light. The optical structure is configured to transform the laser light to transformed laser light such that an overlap of the emission cones of at least a group of the plurality of lasers is increased in field-of-view in comparison to perfectly collimated laser light diffused to a flat-top intensity profile in the field-of-view. The optical structure is arranged to redirect the laser light emitted at angles of the emission cone to the field-of-view so as to increase the overlap of the emitted laser light in the field-of-view. The optical structure is also configured to provide a slope angle of an intensity profile along a direction of the field-of-view that is smaller than a divergence angle of the laser.

An embodiment includes a light source. The light source may include a substrate and a diffuser. The substrate may include a first surface and a second surface. The second surface may be opposite the first surface. The diffuser may be carried by the substrate. The diffuser may be configured to receive an optical signal from the substrate after the optical signal propagates through the substrate and to control a particular profile of a resultant beam of the optical signal over two axes after the optical signal propagates through the integrated diffuser.

An optoelectronic device includes a semiconductor substrate having first and second faces. A first array of emitters are formed on the first face of the semiconductor substrate and are configured to emit respective beams of radiation through the substrate. Electrical connections are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.

An embodiment includes a light source. The light source may include a substrate and an integrated diffuser. The substrate may include a first surface and a second surface. The second surface may be opposite the first surface. The integrated diffuser may be integrated at the chip-level and positioned directly on the second surface of the substrate. The integrated diffuser may be configured to receive an optical signal directly from the substrate after the optical signal propagates through the substrate and to control a particular profile of a resultant beam of the optical signal over two axes after the optical signal propagates through the integrated diffuser.

A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer, a back conductive structure opposite to the front conductive structure, which comprises a plurality of detecting electrodes separated from each other, and a via hole extending from the back conductive structure to the conductive layer, wherein the plurality of detecting electrodes electrically connected to the conductive layer through the via hole