Disclosed herein are various embodiments for laser arrays that include graphene lens structures located on laser-emitting semiconductor structures. In an example embodiment, an apparatus comprising (1) a laser-emitting epitaxial structure having a front and a back, wherein the laser-emitting epitaxial structure is back-emitting, and (2) a graphene lens structure located on the back of the laser-emitting epitaxial structure. Photolithography processes can be used to deploy the graphene lens structures on the laser structures.

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Vertical cavity surface-emitting lasers (VCSELs) includes a vertical cavity surface-emitting laser including a gain layer configured to generate light, a distributed Bragg reflector disposed on a first surface of the gain layer, and a nanostructure reflector disposed on a second surface of the gain layer opposite from the first surface, the nanostructure reflector including a plurality of nanostructures having a sub-wavelength dimension, wherein the plurality of nanostructures include a plurality of anisotropic nanoelements and are configured to emit a circularly polarized laser light through the nanostructure reflector based on distributions and arrangement directions of the plurality of anisotropic nanoelementss.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.

A semiconductor optical amplifier includes: a light source part that is formed on a substrate, the substrate including a substrate surface; and an optical amplification part that amplifies propagation light propagating in a predetermined direction from the light source part and that emits the propagation light amplified in an emission direction intersecting with the substrate surface, the optical amplification part including a conductive region extending in the predetermined direction from the light source part along the substrate surface and a non-conductive region formed on a periphery of the conductive region, the conductive region including a reflection part that reflects the propagation light in a direction intersecting with the predetermined direction when viewed from a direction vertical to the substrate surface.

An opto-electronic device has a backside Vertical Cavity Surface Emitting Laser (VCSEL) device. An optical component is formed on a rear surface of the backside VCSEL device.