A light-emitting device includes: a substrate; a laminated structure provided at the substrate and having a plurality of columnar parts; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The columnar part has: a first semiconductor layer; a second semiconductor layer having a different electrical conductivity type from the first semiconductor layer; and an active layer provided between the first semiconductor layer and the second semiconductor layer. The laminated structure has: a light propagation layer provided between the active layers of the columnar parts that are next to each other; a first low-refractive-index part provided between the light propagation layer and the substrate and having a lower refractive index than a refractive index of the light propagation layer; and a second low-refractive-index part provided between the light propagation layer and the electrode and having a lower refractive index than the refractive index of the light propagation layer.

A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

An optical semiconductor element including a semiconductor substrate, a first cladding layer of a first conductive type provided on the semiconductor substrate, an active layer provided on the first cladding layer, a second cladding layer of a second conductive type provided on the active layer, a first mesa constituted of a part of the first cladding layer, the active layer, and the second cladding layer, an auxiliary cladding layer of the second conductive type provided on the first mesa, a second mesa constituted of the auxiliary cladding layer, and a semi-insulating layer provided on the first cladding layer and on both sides of the first mesa and both sides of the second mesa, wherein a width of the second mesa is greater than a width of the first mesa.

The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of π after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.

Provided is a laser device according to embodiments of the inventive concept comprising a substrate including a gain region, a phase control region, and a tuning region arranged along a first direction, the substrate having an air gap which extends from the phase control region to the tuning region, an upper clad layer on the substrate, a waveguide structure extending in the first direction between the upper clad layer and the substrate, a first upper electrode disposed on the upper surface of the upper clad layer of the tuning region, and a lower electrode disposed on a lower surface of the substrate and extending from the gain region to the tuning region, wherein the air gap may have a larger width than the waveguide in a second direction crossing the first direction.

Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.

A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

A semiconductor optical integrated device is a semiconductor optical integrated device in which a first optical element, a monitoring light waveguide and a second optical element, through which light propagates, are formed on a common semiconductor substrate; wherein the monitoring light waveguide is joined to the first optical element, and the second optical element is joined to the monitoring light waveguide. The monitoring light waveguide includes a light scattering portion for scattering a part of the light, which is composed of a combination of light waveguides having different mode field diameters or having different centers of mode field diameters; and a light detector for receiving scattered light scattered by the light scattering portion, is placed on an outer periphery of the monitoring light waveguide, or on a back surface of the semiconductor substrate on its side opposite to that facing the light scattering portion.

An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.