An optical transconductance varistor system having a modulated radiation source configured to provide modulated stimulus, a wavelength converter operably connected to the modulated radiation source to produce a modulated stimulus having a predetermined wavelength, and a wide bandgap semiconductor photoconductive material in contact between two electrodes. The photoconductive material is operably coupled, such as by a beam transport module, to receive the modulated stimulus having the predetermined wavelength to control a current flowing through the photoconductive material when a voltage potential is present across the electrodes.

A method of forming an optoelectronic device and a silicon device on a single chip. The method may include; forming a stack of layers on a substrate in a first and second region, the stack of layers include a semiconductor layer, a first insulator layer, a waveguide, a second insulator layer, and a device base layer; forming the device on the device base layer in the second region; forming a device insulator layer on the device and on the device base layer in the second region; and forming the optoelectronic device in the first region, the optoelectronic device has a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is on the semiconductor layer, the active region is on the bottom cladding layer, and the top cladding layer is on the active region.

In some embodiments, laser devices having contact pads are formed. The laser diodes are formed from a doped semiconductive material. The contact pads and semiconductive material share an ohmic junction. Underbump metallurgies are formed on the contact pads. Conductive connectors are electrically coupled to the laser devices. The underbump metallurgies help prevent metal inter-diffusion between the contact pads and conductive connectors. As such, when reflowing the conductive connectors, the junction of the contact pads and semiconductive material may retain its ohmic properties.

The present invention relates to a broad-area diode laser (BAL) comprising an integrated p-n tunnel junction. The present invention in particular relates to a high-performance broad-area diode laser in which, in order to improve the beam quality and to reduce the thermal resistance, a p-n tunnel junction, biased in the reverse direction, is integrated in the layer system of the diode laser.

A laser diode according to the invention comprises an active layer (20) formed between an n-doped semiconductor material (10, 12, 14) and a p-doped semiconductor material (30, 32, 34), the active layer (20) forming, along a longitudinal axis, an active zone for generating electromagnetic radiation; wherein at least one n-doped intermediate layer (50, 54) is arranged between an overlying p-side metal contact (52) and the p-doped semiconductor material (30, 32, 34), and, in the at least one n-doped intermediate layer (50, 54) in the region above the active zone, a p-n tunnel junction (40) being formed which is directly adjacent to the p-doped semiconductor material (30, 32, 34).

Provided is a light-emitting device that includes a light emission section, a separation groove, and a high reflectance region. The light emission section includes a stack structure including an active layer, a first reflector, and a second reflector. The active layer performs light emission by current injection. The first reflector and the second reflector are stacked in a first direction with the active layer interposed therebetween. The separation groove is provided symmetrically around the light emission section on an emission surface of light from the stack structure in the first direction. The separation groove is dug in the stack structure in the first direction. The high resistance region is provided in the stack structure on the outer side of an outermost shape of the separation groove on the emission surface. The high resistance region has electrical resistance higher than that of the light emission section.

In some embodiments, laser devices having contact pads are formed. The laser diodes are formed from a doped semiconductive material. The contact pads and semiconductive material share an ohmic junction. Underbump metallurgies are formed on the contact pads. Conductive connectors are electrically coupled to the laser devices. The underbump metallurgies help prevent metal inter-diffusion between the contact pads and conductive connectors. As such, when reflowing the conductive connectors, the junction of the contact pads and semiconductive material may retain its ohmic properties.