A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.

A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

An optical apparatus includes: an optical component opposed to and spaced apart from a light-emitting surface through which laser light is emitted; a case that houses a semiconductor laser element and the optical component and includes an introduction port for introducing gas and an exhaust port for exhausting the gas; and a flow passage section (i.e., a tubular body) including a spray port for spraying the semiconductor laser element with the gas introduced from the introduction port.

Provided is a fluorescent material with high brightness. The fluorescent material includes a nitride fluorescent material comprising La, Ce, Si, and N; and a first phosphorus compound disposed on a surface of the nitride fluorescent material. The first phosphorus compound includes at least one selected from the group consisting of lanthanum phosphate, lanthanum hydrogen phosphate, and hydrates thereof. A content of phosphorus atoms in the fluorescent material is 0.07% by mass or higher and 0.8% by mass or lower.

[Object] To provide a light source device, a headlight, a display apparatus, and an illumination apparatus having excellent heat dissipation. [Solving Means] The light source device includes a substrate, a phosphor, a light emitting element, and a wavelength-selective reflecting member. The phosphor is disposed in contact with the substrate. The light emitting element emits excitation light for exciting the phosphor. The wavelength-selective reflecting member partially reflects the excitation light emitted from the light emitting element to be guided to the phosphor and transmits fluorescence emitted from the phosphor by excitation caused by incidence of the excitation light and the excitation light reflected by the phosphor.

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A light emitting device includes: a plurality of laser elements, each including a light emitting surface; one or more reflectors; a base including: a bottom portion on which the plurality of laser elements and the one or more reflectors are disposed, and a frame portion surrounding the plurality of laser elements in a top view; a cover attached to a top surface of the frame portion; and a lens array that is bonded to the top surface of the cover and includes: a plate-shaped portion, and a plurality of lens-shaped portions protruding upward from the plate-shaped portion, with the plurality of lens-shaped portions integrated into a one-piece body.

A laser light source unit for vehicles is provided, having a resonator containing a first end mirror and a second end mirror and an active laser medium in between. The laser light source unit has a pump device for generating a pump radiation into the resonator. The pump radiation is configured such that laser light of the first wavelength, a second wavelength, and/or a third wavelength can be radiated. An intermediate mirror is configured so that the radiation of the second wavelength is reflected, and the radiation of the third wavelength is transmitted. A third end mirror is configured so that the radiation of the second wavelength is reflected. A color control module acts on the radiation of the second wavelength and/or the third wavelength so that an intensity of the stimulated emission of the radiation of the second wavelength is adjusted to the radiation of the third wavelength.

Included are: an underlying substrate including a first surface; a semiconductor element layer dividable into a plurality of element portions, the semiconductor element layer being located on the first surface of the underlying substrate; and a support substrate including a second surface on which the semiconductor element layer is located, the second surface facing the first surface, the semiconductor element layer being located on the second surface. The support substrate and the semiconductor element layer include a weak portion used to divide the semiconductor element layer into the plurality of element portions.