Methods and devices for driving a laser diode are disclosed herein. An example method includes a boost regulator outputting a maximum boost voltage to drive a laser diode that is configured to output light within a wavelength range of 495 nanometers (nm) to 570 nm. A boost servo may measure a laser voltage, and calculate a voltage difference between the two voltages. The servo may then compare the voltage difference to a drive voltage to determine an excess voltage, and may cause the boost regulator to output an optimum voltage based on the excess voltage. The boost servo may also calculate a low voltage to drive at least one additional component that is electrically coupled to the boost regulator when the laser diode is inactive; and may cause the boost regulator to output the low voltage to power the at least one additional component.

A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.

A laser-based fiber-coupled wide-spectrum light system is provided. The system includes a laser device and one or more phosphor members configured and arranged to provide wide-spectrum emissions. One or more fibers are configured and arranged to receive the wide-spectrum emissions.

An optical member includes: a main body having transparency or heat dissipation properties; an optical film disposed on an upper face of the main body; a metal film disposed on the upper face of the main body in a region other than a region where the optical film is disposed; a surrounding part joined via the metal film; and a wavelength conversion part surrounded by the surrounding part. The wavelength conversion part is positioned inward of a periphery of the optical film in a top view. The wavelength conversion part is not directly bonded to the optical film and the main body.

A semiconductor laser device includes: a plurality of semiconductor laser elements which emit laser beams with different wavelengths; a plurality of lens portions which collimate the laser beams; a wavelength dispersion element on which the laser beams are incident at different angles, and which changes the traveling directions of the incident laser beams according to the wavelengths to generate an emitted beam that is a combined beam of the laser beams; a plurality of first reflective surfaces which cause the laser beams to be incident on the wavelength dispersion element at the angles corresponding to the laser beams; and a plurality of second reflective surfaces which guide the laser beams to the plurality of first reflective surfaces.

A light-emitting system includes an optical fiber, a first light source unit, a second light source unit, and a light-guiding member. The optical fiber includes a wavelength-converting portion containing a wavelength-converting element. The wavelength-converting element may be excited by excitation light to produce a spontaneous emission of light having a longer wavelength than the excitation light and may also be excited by an amplified spontaneous emission of light. The first light source unit makes the excitation light incident on the optical fiber. The second light source unit makes seed light, causing the wavelength-converting element that has been excited by either the excitation light or the amplified spontaneous emission of light to produce a stimulated emission of light, incident on the optical fiber. The light-guiding member guides the light coming from the optical fiber and lets the light emerge therefrom.

A semiconductor device includes a first substrate, a semiconductor layer consisting of a nitride-based compound semiconductor, and a bonding layer bonded to the first substrate and the semiconductor layer between the first substrate and the semiconductor layer, and containing at least one of constituent elements of the nitride-based compound semiconductor.

A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.

A light emitting device includes: a plurality of laser elements including a first laser element and a second laser element; a case enclosing the laser elements and including a light-transmissive region; and a plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first laser element and a second main lens configured to collimate or converge light emitted from the second laser element. At least a first portion of the light-transmissive region is disposed on a first imaginary line passing through a light emitting end surface of the first laser element and the first main lens, and at least a second portion of the light-transmissive region is disposed on a second imaginary line passing through a light emitting end surface of the second laser element and the second main lens.