A wavelength conversion part includes: a wavelength conversion member formed primarily of a ceramic material, wherein the wavelength conversion member has a lower face and one or more lateral faces; an enclosing member formed primarily of a ceramic material, wherein the enclosing member has a lower face, and wherein the enclosing member surrounds the one or more lateral faces of the wavelength conversion member; and a heat dissipating member having a upper face, wherein the heat dissipating member is fixed to the wavelength conversion member, and wherein the upper face of the heat dissipating member opposes the lower face of the wavelength conversion member and the lower face of the enclosing member. The lower face of the wavelength conversion member projects towards the heat dissipating member beyond the lower face of the enclosing member.

A method of manufacturing a light-emitting device includes providing a base body including a base section; fixing a plurality of semiconductor laser elements on an upper surface of the base section; and fixing an optical member to the base body, the optical member including a plurality of lens sections, and a non-lens section disposed at a periphery of the plurality of lens sections in a top view. In the step of fixing the optical member: the optical member is arranged above the base body; (i) an inclination and a height of the optical member are adjusted after interposing an adhesive between the base body and the non-lens section, or (ii) an adhesive is interposed between the base body and the non-lens section after adjusting the inclination and the height of the optical member; and subsequently, the adhesive is cured to fix the optical member to the base body.

A light-emitting device includes: a base having a depressed portion upwardly opening, the depressed portion having a bottom surface, surrounding surfaces and at least one placement surface disposed at a position higher than the bottom surface; at least one semiconductor laser element mounted on or above the bottom surface; and a wavelength conversion member enclosed in the depressed portion to convert a wavelength of light from the at least one semiconductor laser element, the wavelength conversion member having a lower surface disposed on the at least one placement surface and a circumferential edge partly surrounded by the surrounding surfaces.

A lighting apparatus includes: a light source configured to generate laser beams; a light converter disposed in a direction in which the laser beams are emitted and configured to generate converted beams excited by the laser beams and transmitted beams of the laser beams; and a light housing disposed in front of the light converter, having an opening along a path of beam travel, and configured to adjust a light distribution of the converted beams.

A device including a non-polarization material includes a number of layers. A first layer of silicon (100) defines a U-shaped groove having a bottom portion (100) and silicon sidewalls (111) at an angle to the bottom portion (100). A second layer of a patterned dielectric on top of the silicon (100) defines vertical sidewalls of the U-shaped groove. A third layer of a buffer covers the first layer and the second layer. A fourth layer of gallium nitride is deposited on the buffer within the U-shaped groove, the fourth layer including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein a deposition thickness (h) of the gallium nitride above the first layer of silicon (100) is such that the c-GaN completely covers the h-GaN between the vertical sidewalls.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode. At least one of a portion of the transparent electrode corresponding to the opening and a portion of the second-conductivity-type semiconductor layer corresponding to the opening that are in contact with each other in the through opening includes a first resistive region disposed along an inner circumference of the through opening and a second resistive region disposed on a center region of the through opening.

A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.