A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

In one example, a vertical cavity surface emitting laser (VCSEL) may include an active region to produce light at a wavelength, an emission surface to emit the light at the wavelength, a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength, a first oxide aperture in the first oxide region, a second oxide region between the first oxide region and the second oxide region, and a second oxide aperture in the second oxide region. The emitted light may have a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that holds the light diffusing member and is provided on a wire connected to the light source so as to be located in an uncoated region of the wire.

Provided is a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.

The present technology provides a surface emitting laser including: a first multilayer film reflector; a second multilayer film reflector; and an active layer disposed between the first multilayer film reflector and the second multilayer film reflector, in which in the first multilayer film reflector and/or the second multilayer film reflector, a high-concentration impurity region having a higher impurity concentration than other regions is partially provided in a thickness direction. According to the present technology, there is provided a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.

A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.

A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (T.sub.epi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (T.sub.amb) and the epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m.sup.2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.

A method for fabricating a surface emitting laser includes the steps of: carrying out etching of a semiconductor laminate with a mask; and stopping the etching in response to a detection signal from an end point detector in an etching apparatus. The mask has a device area including device sections and an accessary area. The device area has an aperture ratio (OPD/SC) having a first value, the aperture ratio (OPD/SC) being defined as a total area (OPD) of an opening in each device section to an area (SC) of the device section. The accessary area has an aperture ratio having a second value configured to have substantially the same value as the first value, the aperture ratio of the accessary area being defined as an area of the opening pattern in a portion having an area, which is equal to the area of the device section, in the accessary area.

A method for fabricating a surface emitting laser includes the steps of: preparing a processing apparatus with a first part and a second part, the processing apparatus including a first heater and a second heater that heat the first part and the second part, respectively; preparing a wafer product for forming a surface emitting laser, the wafer product including a semiconductor post including a III-V compound semiconductor layer containing aluminum as a constituent element, the III-V compound semiconductor layer being exposed at a side face of the semiconductor post; after disposing the wafer product in the second part, energizing the first heater and the second heater; supplying a first gas containing no oxidizing agent to the processing apparatus; and after stopping supplying the first gas, oxidizing the III-V compound semiconductor layer by supplying a second gas containing an oxidizing agent to the processing apparatus.

A method for fabricating a surface emitting laser includes the steps of: preparing an epitaxial substrate including a substrate and a laminate disposed on the substrate, the laminate including a Bragg reflector and an active layer; forming a mask for defining a semiconductor post on the epitaxial substrate; after forming the mask, placing the epitaxial substrate in an etching apparatus with an end point detector including an optical device; carrying out plasma etching of the epitaxial substrate by supplying a gas including boron chloride and chlorine in the etching apparatus; and stopping the plasma etching in response to an end point detection from the end point detector of the etching apparatus. The optical device of the end point detector detects an end point of a process through a viewport of the etching apparatus. The plasma etching is carried out in a process pressure of one Pascal or less.