An embodiment relates to a surface-emitting laser device and a light-emitting device including same. A surface-emitting laser device according to the embodiment can include: a first reflective layer; an active area disposed on the first reflective layer; an aperture area disposed on the active area; and a second reflective layer disposed on the aperture area. The second reflective layer can include: a first AlGaAs-based layer comprising Al.sub.x1Ga.sub.(1-x1)As (wherein 0<X1<0.2); a second AlGaAs-based layer disposed on the first AlGaAs-based layer and comprising Al.sub.x2Ga.sub.(1-x2)As (wherein 0.8<X2<1.0); and an AlGaAs-based transition area disposed between the first AlGaAs-based layer and the second AlGaAs-based layer. The AlGaAs-based transition area can include: a third AlGaAs-based layer comprising Al.sub.x3Ga.sub.(1-x3)As (wherein 0<X3<0.2); and a fourth AlGaAs-based layer comprising Al.sub.x4Ga.sub.(1-x4)As (wherein 0.8<X4<1.0).

A surface emitting laser includes a first reflecting mirror; a second reflecting mirror; an active region between the first reflecting mirror and the second reflecting mirror. The first reflecting mirror and the second reflecting mirror each include a plurality of low refractive-index layers having a first refractive index; and a plurality of high refractive-index layers having a second refractive index higher than the first refractive index. The plurality of low refractive-index layers and the plurality of high refractive-index layers are alternated one after another. The plurality of high refractive-index layers of the first reflecting mirror includes a first layer; and a second layer having a higher thermal diffusion property in an in-plane direction than the first layer.

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2<Eg3 is satisfied, where Eg2 and Eg3 denote maximum values of band gap energy of the second semiconductor layer and the third semiconductor layer, respectively. The third semiconductor layer includes a first region layer in which band gap energy monotonically decreases toward the fourth semiconductor layer. N2>N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.

A vertical cavity surface emitting laser includes a first laminate including first semiconductor layers having a first Al composition, and second semiconductor layers having a second Al composition greater than the first Al composition; a current confinement structure including a current aperture and a current blocker; a first compound semiconductor layer adjacent to the current confinement structure; and a second compound semiconductor layer adjacent to the first laminate and the first compound semiconductor layer. The first compound semiconductor layer has a first aluminum profile changing monotonously in a direction from the first laminate to the current confinement structure from a first minimum Al composition within a range greater than the first Al composition and smaller than the second Al composition to a first maximum Al composition. The second compound semiconductor layer has an Al composition greater than the first Al composition and smaller than the first maximum Al composition.

A method of manufacturing a surface emitting laser includes: preparing a substrate on which a lower reflector layer, an active layer and an upper reflector layer are formed in this order from the bottom, each of the lower reflector layer and the upper reflector layer including a semiconductor multilayer film; forming an insulating film on the upper reflector layer; cleaning the substrate using isopropyl alcohol after the forming; patterning a photoresist by applying the photoresist on the insulating film and exposing the photoresist, after the cleaning; and forming a high resistance region by implanting ions into portions of the lower reflector layer, the active layer and the upper reflector layer exposed from the photoresist, after the patterning; wherein the cleaning includes cleaning the substrate with a liquid of the isopropyl alcohol and drying the substrate in a vapor of the isopropyl alcohol.

A light source structure includes a vertical cavity surface-emitting laser (VCSEL) device having a top surface and at least one side surface substantially perpendicular to and adjoining the top surface. The VCSEL device is configurable to output directed emission of light through the top surface. The light source structure also includes a light barrier surrounding at least a top portion of the VCSEL device and separated from the at least one side surface. The light barrier is configured to receive spontaneous emission out of the VCSEL device through the at least one side surface.

A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (m) to 100 m and may include a DFB grating with a first kappa in a range from 100 cm.sup.1 to 150 cm.sup.1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 m. The DBR region may include a DBR grating with a second kappa in a range from 150 cm.sup.1 to 200 cm.sup.1. The DR laser may additionally include a lasing mode and a p-p resonance frequency. The lasing mode may be at a long wavelength side of a peak of a DBR reflection profile of the DBR region. The p-p resonance frequency may be less than or equal to 70 GHz.

A surface-emitting semiconductor laser includes a first emission region that outputs first light, and a second emission region that is provided separately from the first emission region, includes a phase shift section, and outputs second light. A far field pattern of the first light and a far field pattern of the second light are different from each other.

A vertical-cavity surface-emitting laser, comprising a substrate, wherein bottom n-type DBR mirror, first oxidation confinement layer, n-type guide spacer layer, active region layer, p-type guide spacer layer, second oxidation confinement layer, first spacer layer, third oxidation confinement layer second spacer layer, fourth oxidation confinement layer, third spacer layer, fifth oxidation confinement layer, fourth spacer layer, sixth oxidation confinement layer, fifth spacer layer, seventh oxidation confinement layer, sixth spacer layer, eighth oxidation confinement layer, top p-type DBR mirror, p-type contact layer and p-side electrode are successively stacked on the substrate; and a back surface of the substrate is provided with an n-side electrode.