A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

An embodiment relates to a surface emitting laser device and a light emitting device including the same. A surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an aperture area disposed on the active layer and including an aperture and an insulating region; and a second reflective layer disposed in the aperture area. The active layer may comprise a plurality of quantum wells, quantum barriers, and intermediate layers disposed between the quantum wells and the quantum barriers. The quantum wells and the quantum barriers may include a ternary material, and the intermediate layers may comprise a binary material.

A laser including a grating configured to reduce lasing threshold for a selected vertically confined mode as compared to other vertically confined modes.

A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.

An array of surface-emitting lasers is provided. The array outputs high brightness in a unipolar way. The array comprises a stress-adjustment unit and a plurality of epitaxial device units. The stress-adjustment unit is used to adjust stress. The stress from a substrate is used to select a laser mode for an aperture unit. The selection of the laser mode is enhanced for the aperture unit without sacrificing driving current. Low current operation is achieved in a single mode for effectively reducing volume and further minimizing the size of the whole array to achieve high-quality laser output. An object can be scanned by the outputted laser to obtain a clear image with a high resolution. Hence, the present invention is applicable for face recognition with high recognition and high security.

The present disclosure provides fabrication of a laser diode with reliability at a high temperature of 80° C. or more in a high-power single mode by a process of thinly growing a second upper clad (P clad) layer at 1 μm or less in primary growth, appropriately controlling an upper portion Wt to 1.5 μm or more and a lower portion Wb to 4.0 μm or less of the wave guide, and then compensating for a second upper clad layer to 0.5 μm or more in regrowth, in order to compensate for disadvantages of a high-power and high-reliability laser diode device with a thick second upper clad layer (P clad). A second upper clad regrowth layer is applied to reduce internal resistance and voltage and reduce heat generated in the device to increase a Kink and a COD power, thereby improving the performance of a high-power and high-reliability laser diode.

A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.

A semiconductor optical amplifier includes: a substrate; a light source unit formed on the substrate; and an optical amplification part that amplifies light propagating in a predetermined direction from the light source unit and emits the amplified light in an emission direction intersecting with the substrate surface. The optical amplification part includes a conductive region extending in the predetermined direction along the substrate surface from the light source unit, and a nonconductive region formed around the conductive region. The conductive region includes a first region extending from the light source unit and having a predetermined width as seen from a direction perpendicular to the substrate surface, and a second region connected to the first region and having a width widened relative to the predetermined width of the first region, the second region being configured to expand the propagation light in a direction intersecting with the predetermined direction.

The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.