Photonic devices such as semiconductor lasers and photodetectors of various operating wavelengths are grown monolithically on a Silicon substrate, and formed of nanowire structures with quantum structures as active regions. A reduction of strain during fabrication results from the use of these nanowire structures, thereby allowing devices to operate for extended periods of time at elevated temperatures. Monolithic photonic devices and monolithic photonic integrated circuits formed on Silicon substrates are thus provided.

Photonic devices such as semiconductor lasers and photodetectors of various operating wavelengths are grown monolithically on a Silicon substrate, and formed of nanowire structures with quantum structures as active regions. A reduction of strain during fabrication results from the use of these nanowire structures, thereby allowing devices to operate for extended periods of time at elevated temperatures. Monolithic photonic devices and monolithic photonic integrated circuits formed on Silicon substrates are thus provided.

In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M/2, where is a wavelength of emitted light, M and N are positive integers, and M is N or less.

Certain examples described herein relate to a surface-emitting semiconductor-laser which includes an oxide window, a light emitting cavity, and at least one phase matching window. The oxide window, the light emitting cavity, and the at least one phase matching layer are arranged so that a predetermined phase relationship is satisfied. The phase relationship facilitates high performance and stable multimode operations of the surface-emitting semiconductor laser designed to emit between 850-1060 nm wavelength for applications such as long distance optical communications in high performance computing and data servers.

Certain examples described herein relate to a surface-emitting semiconductor-laser which includes an oxide window, a light emitting cavity, and at least one phase matching window. The oxide window, the light emitting cavity, and the at least one phase matching layer are arranged so that a predetermined phase relationship is satisfied. The phase relationship facilitates high performance and stable multimode operations of the surface-emitting semiconductor laser designed to emit between 850-1060 nm wavelength for applications such as long distance optical communications in high performance computing and data servers.

An ICL has (1) an IC region having a real refractive index, the IC region configured to generate light based on interband transitions, (2) an outer cladding layer formed from a high-doped semiconductor material and having an outer cladding layer real refractive index which is lower than the IC region real refractive index, and (3) a metal contact to the outer cladding region. The ICL may further include an intermediate cladding layer positioned between the IC region and the outer cladding layer, and at least one SCL positioned between the IC region and the intermediate cladding layer. In one non-limiting embodiment the ICL comprises an outer cladding layer positioned on a p-type GaSb substrate, wherein the high-doped semiconductor material comprises n.sup.+-type InAsSb doped with silicon and the GaSb substrate is doped with beryllium or zinc. The ICL may instead comprise a semi-insulating substrate such as GaAs, Si, or InP.

A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M/2, where is a wavelength of emitted light, M and N are positive integers, and M is N or less.

Provided is a semiconductor laser element according to the present technology that includes a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

An embodiment is a multiple quantum well structure between a p-type semiconductor and an n-type semiconductor in a semiconductor laser, the multiple quantum well structure including a plurality of well layers, and a plurality of barrier layers having shorter composition wavelengths than the plurality of well layers, where at least one of the plurality of well layers, excluding a p-side well layer closest to the p-type semiconductor, has a quantum level wavelength shorter than a quantum level wavelength of the p-side well layer.