A semiconductor laser module (10) comprises a tapered laser diode (12) and/or a tapered amplifier diode equipped with beam shaping optics (14). The tapered laser diode and/or the tapered amplifier diode includes an emission facet (16) for emitting a laser beam (18) along a beam axis (24). The beam-shaping optics comprise a plano-convex cylindrical lens oriented so as to change divergence of the beam in the fast axis direction, the plano-convex spherical cylindrical lens having a planar surface (26) arranged facing the facet and a circular cylindrical surface (22) facing away from the facet.

In various embodiments, pointing errors in a non-wavelength-beam-combining dimension of a laser system are at least partially alleviated via staircased collimation lenses.

A quantum cascade laser has a core region including a first injection layer, an active region, and a second injection layer. The active region includes a first well layer, a second well layer, a third well layer, a first barrier layer, and a second barrier layer. The first barrier layer is disposed between the first well layer and the second well layer and separates the first well layer from the second well layer. The second barrier layer is disposed between the second well layer and the third well layer and separates the second well layer from the third well layer. The first barrier layer has a thickness of 1.2 nm or less, and the second barrier layer has a thickness of 1.2 nm or less.

A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.

A pigtailed diode laser module is configured with a case housing a plurality of multimode chips which are arranged in at least one row and output respective beams in one direction. Each output beam is collimated in upstream fast and downstream slow axes collimators which are spaced from one another in the one direction. The collimated output beams are incident on respective mirrors redirecting the incident output beams in another direction which is transverse to the one direction. Propagating further one above another, the output beams constitute a combined beam which diverges in the slow axis while propagating towards at least one lens which focuses the combined beam in the slow axis in the focal plane thereof. The output fiber is mounted to the case such that its core end is located coplanar with the smallest cross-section of the focused combined beam spaced downstream from the focal plane at a predetermined distance.

In various embodiments, pointing errors in a non-wavelength-beam-combining dimension of a laser system are at least partially alleviated via staircased collimation lenses.

The dual wavelength laser diode module is a module that consists of two or more wavelengths separated by 10 nm or more nm with the goal to produce an output beam of two different wavelength beams that are not-colinear. Providing to two separate lines in the focal point of a Fourier transform lens.

In various embodiments, multiple laser emitters are helically arranged around a central axis and emit their individual beams toward the central axis. A collection of mirrors is disposed at the central axis, and each mirror is angled so that the reflected beams all exit the helical stack, in parallel and vertically stacked, in the same direction toward a shared exit point.

The invention relates to a device and a method for projecting a plurality of radiation points onto an object surface, comprising at least one radiation source for emitting electromagnetic radiation, comprising at least one beam path, via which the radiation emitted at least temporarily by the emitters is deflected in the direction of the object surface, and comprising a controller which, in order to change at least one property of the emitted radiation, controls the radiation source according to a light object to be generated on the object surface. The controller is designed in such a way that at least two of the plurality of emitters of the radiation source are each individually controlled in order to change at least one property of the emitted radiation according to the light object to be generated, and at least one optical element for shaping, directing and/or converting the electromagnetic radiation is arranged in the beam path.

A light-emitting device includes: a substrate including a base and a side wall; a plurality of semiconductor laser elements arrayed in a first direction on an upper surface of the base; a sealing member fixed to the substrate, wherein the sealing member and the substrate define a sealed space in which the semiconductor laser element is located; and a lens array disposed above the sealing member, the lens array including a plurality of lens sections arrayed in the first direction. In the lens array, a maximum outer diameter of each lens sections is 1.25 times or more than an inter-vertex distance between adjacent ones of the lens sections in the first direction.