A voltage output circuit and an electronic cigarette are provided. The voltage output circuit includes a control chip and a step-down switch chip. When a first switch element turns on, the modulation signal output terminal of the control chip outputs a pulse modulation signal to a first control terminal of the step-down switch chip, and access between a first access terminal and a second access terminal of the step-down switch chip is established, based on the effective pulse modulation signal. The output voltage of the second access terminal is less than a system power voltage. The voltage output circuit and the electronic cigarette outputs the pulse modulation signal to the step-down switch chip by the control chip, and the step-down switch chip outputs a suitable driving voltage to the load, such as a thermal wire, the voltage output circuit with simplified structure is adjustable and improved.

A control circuit and method for a voltage converter. The control circuit having a ramp circuit, a reference generating circuit, a comparison circuit and a logic circuit. The ramp circuit generates a ramp signal that decreases from the moment the power switch is turned off and increases from the moment the power switch is turned on. The reference generating circuit generates a reference voltage. The comparison circuit compares the reference voltage with the sum of the feedback voltage and the ramp signal to generate a comparison signal. The logic circuit uses the comparison signal and a clock signal to generate the control signal to control a power switch of the voltage converter.

A control circuit and method for a voltage converter. The control circuit having a ramp circuit, a reference generating circuit, a comparison circuit and a logic circuit. The ramp circuit generates a ramp signal that decreases from the moment the power switch is turned off and increases from the moment the power switch is turned on. The reference generating circuit generates a reference voltage. The comparison circuit compares the reference voltage with the sum of the feedback voltage and the ramp signal to generate a comparison signal. The logic circuit uses the comparison signal and a clock signal to generate the control signal to control a power switch of the voltage converter.

A control circuit and method for a voltage converter. The control circuit having a ramp circuit, a reference generating circuit, a comparison circuit and a logic circuit. The ramp circuit generates a ramp signal that decreases from the moment the power switch is turned off and increases from the moment the power switch is turned on. The reference generating circuit generates a reference voltage. The comparison circuit compares the reference voltage with the sum of the feedback voltage and the ramp signal to generate a comparison signal. The logic circuit uses the comparison signal and a clock signal to generate the control signal to control a power switch of the voltage converter.

Described is an apparatus which comprises: a plurality of transistors coupled to an input power supply and to a load; a first comparator with a first node coupled to the load, and a second node coupled to a first reference; a second comparator with a first node coupled to the load, and a second node coupled to a second reference, the second reference being different from the first reference; and a logic unit to receive output of the first comparator and output of the second comparator, the logic unit to turn on or off transistors of the plurality of transistors according to outputs of the first and second comparators.

A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.

A plurality of gate driver units (3,4) respectively drives a plurality of semiconductor switching devices (SW1,SW2) connected in parallel. A control circuit (5) controls the plurality of gate driver units (3,4). Each gate driver unit (3,4) includes a gate driver (6) supplying a gate voltage to a gate of the corresponding semiconductor switching device (SW1,SW2), and a potential difference measuring unit (7) measuring a potential difference (Va) arising due to wiring inductance on an emitter side of the corresponding semiconductor switching device (SW1,SW2) for each cycle of an output frequency. The control circuit (5) adjusts the gate voltage (VGE) supplied by the gate driver (6) of each gate driver unit (3,4) such that the potential differences (Va) of the plurality of semiconductor switching devices (SW1,SW2) in turn-on or turn-off switching operation become same as each other.

A circuit includes a voltage converter converting source voltage to supply voltage at a first node as a function of a feedback voltage at a feedback node. A first output path is coupled between first and second node nodes. Feedback circuitry couples the second node to the feedback node when a voltage at the second node exceeds a first overvoltage, in a first mode of operation. The feedback circuitry couples the second node to the feedback node when the voltage at the second node exceeds a second overvoltage less than the first overvoltage, in a second mode of operation. Impedance circuitry is coupled between the first node and a third node and generates an auxiliary supply voltage and an auxiliary ground voltage when the circuit is in both the first and second modes, the auxiliary supply voltage being less than the supply voltage in both the first and second modes.

A power semiconductor system includes: a power stage module having one or more power transistor dies attached to or embedded in a first printed circuit board; and an inductor module attached to the power stage module and having an inductor electrically connected to an output node of the power stage module. The inductor includes windings patterned into a second printed circuit board of the inductor module.

A reactor unit includes reactors; and a cooler. The reactors are disposed in at least one line on a reactor cooling surface that is one of outer surfaces of the cooler. The cooler has a cooling medium flow passage that is in contact with an inner surface on a reverse side of the reactor cooling surface. The cooling medium flows linearly from an inlet portion to an outlet portion of the cooling medium flow passage. A direction in which the cooling medium flows inside the cooling medium flow passage is same as a direction in which the reactors are disposed in the at least one line. Cooling fins are provided on the inner surface on the reverse side of the reactor cooling surface. A longitudinal direction of each cooling fin is same as the direction in which the cooling medium flows inside the cooling medium flow passage.