An apparatus is disclosed for processing a signal with a divided amplifier. In example implementations, an apparatus includes a first portion of an amplifier, a first port interface, a second port interface, and a switch matrix. The first port interface includes a first transformer; a second portion of the amplifier, which is coupled to the first transformer; and a first switch component that is coupled to at least one of the first transformer or the second portion of the amplifier. The second port interface includes a second transformer and a second switch component that is coupled to the second transformer. The switch matrix is coupled between the first switch component and the first portion of the amplifier and between the second switch component and the first portion of the amplifier. The switch matrix is also coupled between the second portion of the amplifier and the first portion of the amplifier.

In a particular implementation, an apparatus including first and second bias circuits and an inner amplifier provides sense amplifier offset cancellation. The inner amplifier includes: first and second current generators configured to replicate respective first and second currents from the first and second bias circuits, first and second transistors configured to transform the first and second currents into voltage samples, and first and second capacitors configured to store the voltage samples. In a sampling phase, a sampling of the first and second currents may be performed in the inner amplifier, and further, in an amplification phase, an amplification of the stored voltage samples may also be performed in the inner amplifier.

A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.

A high-speed comparator circuit is provided. The circuit includes an amplifier portion, a latch portion, and a negative capacitance portion. The amplifier portion includes an input coupled to receive an analog signal and an output. The latch portion is coupled to the amplifier portion. The latch portion is configured to provide at the output a digital value based on the analog signal. The negative capacitance portion is coupled to the output. The negative capacitance portion is configured to cancel parasitic capacitance coupled at the first output.

According to one embodiment, there is provided a semiconductor device comprising a first differential amplifier circuit. The first differential amplifier circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. The second transistor's gate and drain are connected to the first transistor. The third transistor is diode-connected through the first transistor or diode-connected without passing through the first transistor. Thea fourth transistor is diode-connected through the second transistor or diode-connected without passing through the second transistor. The fifth transistor forms a first current mirror circuit with the third transistor. The sixth transistor is connected to a drain of the first transistor in parallel with the third transistor and forms a second current mirror circuit with the fifth transistor.

Differential amplifier circuitry including: first and second main transistors of a given conductivity type; and first and second auxiliary transistors of an opposite conductivity type, where the first and second main transistors are connected along first and second main current paths passing between first and second main voltage reference nodes and first and second output nodes, respectively, with their source terminals connected to the first and second output nodes, respectively, and with their gate terminals controlled by component input signals of a differential input signal; and the first and second auxiliary transistors are connected along first and second auxiliary current paths passing between first and second auxiliary voltage reference nodes and the first and second output nodes, respectively, with their drain terminals connected to the first and second output nodes, respectively, and with their gate terminals controlled by the component input signals of the differential input signal.

A low energy transmitter is provided. The transmitter includes an antenna circuit wherein the antenna circuit has an antenna positive node interface (Vop) and an antenna negative node interface (Von); a reference voltage source that supplies a reference voltage to the antenna circuit; and a common mode feedback (CMFB) circuit coupled to the antenna circuit that receives from the antenna circuit inputs from the Vop and the Von and supplies at least one signal to the antenna circuit.

A semiconductor memory device includes a differential waveform shaping circuit including first and waveform shaping circuits connected in parallel. The first waveform shaping circuit has a first inverting amplifier, and two inverters connected in series. The first inverting amplifier inverts and differentially amplifies an input signal having a rectangular waveform. Then, the output of the first inverting amplifier is passed through the two inverters. The second waveform shaping circuit has a first inverter, a second inverting amplifier, and a second inverter connected in series. The second inverting amplifier inverts and differentially amplifies the output signal from the first invertor, and the second inverter inverts the output signal from the second inverting amplifier. The differential waveform shaping circuit generates an output signal by averaging the output signal from the first waveform shaping circuit and the output signal from the second waveform shaping circuit.

In a particular implementation, an apparatus including first and second bias circuits and an inner amplifier provides sense amplifier offset cancellation. The inner amplifier includes: first and second current generators configured to replicate respective first and second currents from the first and second bias circuits, first and second transistors configured to transform the first and second currents into voltage samples, and first and second capacitors configured to store the voltage samples. In a sampling phase, a sampling of the first and second currents may be performed in the inner amplifier, and further, in an amplification phase, an amplification of the stored voltage samples may also be performed in the inner amplifier.

A signal processing circuit includes a signal receiving circuit for generating a first input signal and a second input signal; a signal output circuit for generating a first output signal and a second output signal according to the first input signal and the second input signal; a negative impedance circuit, for amplifying the first input signal at the first input terminal to generate a first amplified input signal at the second output terminal, and for amplifying the second input signal at the second input terminal to generate a second amplified input signal at the first output terminal; a first capacitor; a second capacitor; wherein the first capacitor and the second capacitor have different DC voltage levels at both terminals, such that the impedance-signal variation rate of the negative impedance circuit is lower than a predetermined level.