Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard.

A vibrator group manufacturing method includes measuring resonance frequencies of first to n-th vibrators with respect to a vibrator group including the first to n-th vibrators arranged in a matrix, n being an integer of 2 or greater, and storing attachment information of the vibrator group in a storage device, the attachment information including identification information imparted to the vibrator group, pieces of first to n-th positional information indicating positions of the first to n-th vibrators, and pieces of first to n-th characteristic information based on measurement results of the resonance frequencies of the first to n-th vibrators.

An element is arranged to cooperate with another part so as to form an encapsulation device for a component including the element at least partially coated with a metallization. The metallization includes at least one metal layer protected by an intermetallic compound which is coated by a non-diffused portion of a material whose melting point is lower than 250 C. A method of fabricating the encapsulation device is also disclosed.

A method for the batch production of acoustic wave filters comprises: synthesizing N theoretical filters, each filter defined by a set of j theoretical resonator(s) having a triplet C.sub.0ij,eq, .sub.rij,eq and .sub.aij,eq, these parameters grouped into subsets; determining a reference resonator structure for each subset, naturally having a resonant frequency .sub.r,ref, where .sub.aij,eq<.sub.r,ref<.sub.rij,eq; determining, for each theoretical resonator, an elementary building block comprising an intermediate resonator R.sub.ij, a parallel reactance Xp.sub.ij and/or a series reactance Xs.sub.ij, the intermediate resonator R.sub.ij having a triplet C.sub.0ij, .sub.r,ref and .sub.a,ref, the parameters C.sub.0ij, Xpij and/or Xs.sub.ij defined so the elementary building block has a triplet: C.sub.0ij,eq, .sub.rij,eq and .sub.aij,eq; determining the geometrical dimensions of the actual resonators R.sub.ij of the filters so they have a capacitance C.sub.0ij; producing each actual resonator; associating series and/or parallel reactances with actual resonators in order to form the elementary building blocks.

A resonant circuit comprises an input terminal and an output terminal and at least: a group of N resonators, where N1, the resonators having the same resonance frequency and the same antiresonance frequency; a first and a second impedance matching element having a non-zero reactance, the first element being in series with the group of resonators, and the second element being in parallel with the group of resonators, the resonant circuit comprising: first means for controlling the group of resonators, enabling the static capacitance of the group to be fixed at a first value; second control means, enabling the impedance of the first impedance matching element and that of the second element to be fixed at second values; the first and second values being such that the triplet of values composed of the static capacitance of the group, the impedance of the first element, and the impedance of the second element can be used to determine the following triplet of parameters: the characteristic impedance Z.sub.c of the assembly formed by the group, the first impedance matching element and the second matching element; the resonance frequency .sub.r of the assembly; the antiresonance frequency .sub.a of the assembly, in order to stabilize the impedance of the circuit at a chosen characteristic impedance.

In a frequency adjustment method of a crystal resonator according to an embodiment, a frequency adjustment metal film made of a base metal layer and a metal layer laminated thereon is formed on a first main surface, facing a second excitation electrode, of a second sealing member made of crystal. The frequency adjustment is performed by: irradiating the frequency adjustment metal film with a laser from an outside of the second sealing member so that the laser penetrates an interior thereof and heats the base metal layer; and melting and evaporating at least part of the metal layer so that the evaporated metal layer is adhered to the second excitation electrode. The melting temperature of the base metal layer is higher than the melting temperature of the metal layer, and the difference therebetween is not less than 1500 K.

The present invention provides a piezoelectric quartz crystal resonator and a method for fabricating the same. The piezoelectric quartz crystal resonator comprises a circuit board, a quartz crystal resonator, and a thermistor; wherein, the thermistor is configured to detect a temperature of the quartz crystal resonator, the thermistor and the quartz crystal resonator are arranged on the circuit board and interconnected with each other via electric wires arranged on the circuit board; the thermistor and the quartz crystal resonator are sealed independently from each other by thermoplastic material, and the thermoplastic material sealing the thermistor is in contact with the thermoplastic material sealing the quartz crystal resonator.

In one embodiment, a bonded quartz wafer package includes a first quartz wafer including at least one quartz-based device, a second quartz wafer disposed above the first quartz wafer, and a liquid crystal polymer (LCP) bonding layer disposed in between the first and second quartz wafers that bonds the first and second quartz wafers together.

There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, and an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate. The IDT includes interleaved fingers. At least one of the interleaved fingers includes a first layer adjacent the piezoelectric plate and a second layer over the first layer, wherein a width of the first layer is constant, and wherein a width of the second layer varies along a length of the at least one interleaved finger.

The disclosed technology relates to a method of fabricating an acoustic wave device including providing a piezoelectric layer for forming the acoustic wave device, selectively implanting ions into localized regions of the piezoelectric layer, and further processing to configure the acoustic wave device to generate an acoustic wave.