A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) vibrates at resonance frequency f.sub.0 and comprises at least one bulk acoustic resonator (110a, 110b). The ESR*A*f.sub.0 values of the resonator assembly (100) are in the range from 12 mm.sup.2 MHz to 83 mm.sup.2 MHZ.

A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) comprises two bulk acoustic resonators (110a, 110b) and a flexural mode resonator (120). The flexural mode resonator (120) mechanically connects the two bulk acoustic resonators (110a, 110b), and the MEMS resonator assembly (100) is configured to vibrate in a collective resonance mode in which motions of the two bulk acoustic resonators (110a, 110b) are substantially in the same or 180 degrees shifted phase with respect to each other.

The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

A dual-mode resonator assembly includes a plurality of electrodes disposed around the resonator and configured to transduce information related to a first mode of operation of the dual-mode resonator assembly and a second mode of operation of the dual-mode resonator assembly. The plurality of electrodes includes electrodes associated with the first mode of operation and electrodes associated with the second mode of operation. The plurality of electrodes are disposed symmetrically and centered to nodes and antinodes of the first mode of operation and/or the second mode of operation. The electrodes are configured to also minimize feedback and noise from the first and second mode of operation.

A piezoelectric Micro-Electro-Mechanical Systems (MEMS) resonator employs a thin-film piezoelectric layer as an anchor, which eliminates a dominant loss source, anchor loss, which stems from the irreversible mechanical energy radiation through the anchors. By implementing fundamental or higher-order thickness Lame modes (TLMs) in the thickness direction, the piezoelectric resonator exhibits a substantial reduction of thermoelastic damping (TED) and increase of anchor quality factor. The piezoelectric resonator also provides temperature stability by utilizing a substrate with a turnover temperature, minimizing deviation on resonance frequency. This approach enables the use of thin-film piezoelectric materials as anchors, which can be precisely controlled to minimize losses. The piezoelectric resonator's compact design and CMOS-compatibility make it suitable for batch production at a minimal cost per unit. Furthermore, the highly frequency-stable temperature point of the piezoelectric resonator can be used for implementing oven-controlled oscillators for ultra-stable clock generation in various applications.

A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) vibrates at resonance frequency f.sub.0 and comprises at least one bulk acoustic resonator (110a, 110b). The ESR*A*f.sub.0 values of the resonator assembly (100) are in the range from 12 mm.sup.2 MHz to 83 mm.sup.2 MHZ.