The invention combines two filter technologies on a single device using the same substrate there for. On this substrate a filter circuit is arranged that has a ladder-type or a lattice arrangement of series and parallel impedance elements to provide a hybrid filter having for example a band pass function. The impedance elements are chosen from BAW resonators and LC elements.

A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer. The resonator structure is suspended in a cavity in a cap structure.

The integrated circuit device includes: a pad that has a shape having a longitudinal direction and a lateral direction; a circuit that overlaps the pad in a plan view, and that is electrically coupled to the pad; a lead-out wiring that is led out from an outer edge on a longitudinal side of the pad along the lateral direction of the pad; and a via group that electrically couples the lead-out wiring and a wiring of the circuit and that does not overlap the pad in the plan view.

Provided is a piezoelectric device capable of improving measurement precision of a temperature of a piezoelectric element. A piezoelectric device (1) includes a package (2) including a housing member (4) having a thermistor substrate (3) and a frame (7) provided to project from a first main surface (3a) of the thermistor substrate (3) and in which a housing part (6) is formed by the first main surface (3a) and the frame (7) and a lid (9) provided on the frame (7) to cover a space (5) of the housing part (6), and a piezoelectric vibration element (5) provided on the first main surface (3a) of the thermistor substrate (3) in the housing part (6), wherein the thermistor substrate (3) is a multilayer negative temperature coefficient (NTC) thermistor.

Packaged RF front end systems including a hybrid filter and an active circuit in a single package are described. In an example, a package includes an active die comprising an acoustic wave resonator. A package substrate is electrically coupled to the active die. A seal frame surrounds the acoustic wave resonator and is attached to the active die and to the package substrate, the seal frame hermetically sealing the acoustic wave resonator in a cavity between the active die and the package substrate.

A resonator device includes a base and a resonator component disposed on the base. The base includes a semiconductor substrate having a first surface and a second surface that are in a front-to-back relation with each other; an integrated circuit that includes a wiring layer disposed at the second surface side and including a connection pad and includes an insulating layer disposed between the second surface and the wiring layer; a through electrode that penetrates the semiconductor substrate and the insulating layer and is coupled to the connection pad; and an annular metal layer that is disposed so as to penetrate the insulating layer between the second surface and the wiring layer and surrounds the through electrode in a plan view of the semiconductor substrate.

A vibrator device includes a semiconductor substrate, a base, a vibrating element, and a lid. The semiconductor substrate has a first surface and a second surface which is in a front-back relationship with the first surface. The base includes an integrated circuit disposed on a first surface or a second surface. The vibrating element is electrically coupled to the integrated circuit and is disposed on the first surface side. The lid is joined to the base at a joining portion of the base to accommodate the vibrating element. The integrated circuit includes a passive element, and the passive element is disposed such that at least a part of the passive element overlaps with the joining portion in a plan view from a direction orthogonal to the first surface.

An integrated structure of a crystal resonator with a control circuit and an integration method therefor. The crystal resonator is formed by first forming a lower cavity (120) in a device wafer (100) in which a control circuit is formed, forming a piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within an upper cavity (400) through forming a cap layer (420) using a planar fabrication process, The crystal resonator according to the present invention has a smaller size, which is help for reducing the power consumption thereof, and the crystal resonator is more easily integrated with other semiconductor components, thereby improving the integration of the device.

The present disclosure relates to a semiconductor package and a method of manufacturing the same. In some embodiments, a semiconductor package includes a substrate, at least one die, a sealing ring and an inductor. The at least one die is mounted on the substrate and includes a plurality of component structures operating with acoustic waves. The component structures are arranged on a side of the at least one die that faces the substrate. The sealing ring is disposed between the at least one die and the substrate and surrounds the component structures. The inductor is disposed in the substrate.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. The integration is accomplished by bonding a substrate containing an upper cavity to a device wafer containing both the control circuit and a lower cavity so that a piezoelectric vibrator is sandwiched between the device wafer and the substrate. An increased degree of integration of the crystal resonator and on-chip modulation of its parameters can be achieved by further bonding a semiconductor die to the device wafer. Compared to traditional ones, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator of the present invention is more compact in size and hence less power-consuming.