A filter device having a reduced sensitivity to production tolerances comprises a multilayer panel with integrated wiring, a piezoelectric substrate mounted to the panel. A first filter circuit (FC.sub.1) and a signal path (SP) comprising a second filter circuit are realized on the substrate and connected to a common antenna terminal (AT) as well as to a common node (CN) located on top of the piezoelectric substrate. A first matching circuit (MC.sub.1) and further matching circuits (MC.sub.2) are realized by the wiring in the multilayer panel.

An acoustic wave device is disclosed. the acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode at least partially embedded in the piezoelectric layer, and a second solid acoustic mirror over the over the piezoelectric layer. The interdigital transducer electrode is configured to generate an acoustic wave having a wavelength of L. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave.

A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

A vibrator device includes a first excitation electrode, a first pad electrode, and a first drawn wiring line that are disposed at a first surface of a vibrator element, a second excitation electrode, a second pad electrode, and a second drawn wiring line that are disposed at a second surface of the vibrator element, and a spiral first electrode pattern disposed at the first surface of the vibrator element. The first excitation electrode and the second excitation electrode are disposed so as to face each other with the vibrator element therebetween. A first central end section of the first electrode pattern is electrically coupled to the second drawn wiring line via a through electrode provided in the vibrator element. A first outer circumferential end section of the first electrode pattern is electrically coupled to the first drawn wiring line. The first drawn wiring line is electrically coupled to at least one of the first excitation electrode and the first pad electrode. The second drawn wiring line is electrically coupled to at least one of the second excitation electrode and the second pad electrode.

An acoustic wave device includes a support substrate including a main surface including first and second regions adjacent to each other in a plan view; a multilayer body including an intermediate layer in the first region of the support substrate and a piezoelectric layer on the intermediate layer, and including a side surface; an IDT electrode on the piezoelectric layer of the multilayer body; and an insulating film in the second region of the support substrate to cover the side surface of the multilayer body. An angle defined between the main surface of the support substrate and the side surface of the multilayer body is a tilt angle, and the side surface of the multilayer body includes portions having different tilt angles at a portion covered with the insulating film.

Embodiments may relate to a die such as an acoustic wave resonator (AWR) die. The die may include a first filter and a second filter in the die body. The die may further include an electromagnetic interference (EMI) structure that surrounds at least one of the filters. Other embodiments may be described or claimed.

Aspects of this disclosure relate to a method of manufacturing a packaged acoustic wave component with two acoustic wave devices interconnected by a thermally conductive frame. The method includes providing a first acoustic wave device having a multi-layer piezoelectric substrate structure with a first piezoelectric layer disposed over a first support layer and an interdigital transducer electrode. The method further includes stacking the first acoustic wave device relative to a second acoustic wave device such that a thermally conductive frame extends between the first acoustic wave device and the second acoustic wave device. The thermally conductive frame provides a thermal path for heat dissipation from the first acoustic wave device to the second acoustic wave device.

An acoustic wave device includes in order a substrate, an acoustic reflection layer, a piezoelectric layer, an IDT electrode including a pair of comb electrodes, and wiring electrodes. The acoustic reflection layer includes a low Z dielectric layer, a high Z dielectric layer below the low Z dielectric layer and having an acoustic impedance higher than that of the low Z dielectric layer, and a metal layer above the low Z dielectric layer and having an acoustic impedance higher than that of the low Z dielectric layer. When the acoustic reflection layer is viewed in plan, in a region encompassing the IDT electrode and the wiring electrodes but no IDT electrodes other than the IDT electrode, an area including the metal layer is smaller than an area including the high Z dielectric layer.

An integrated structure of crystal resonator and control circuit and an integration method therefor. The crystal resonator is formed by first forming the lower cavity (120) in the device wafer (100) containing the control circuit (110), forming the piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within the upper cavity (400) through forming the cap layer (420) using a planar fabrication process. In addition, a semiconductor die (500) is bonded to the same device wafer (100), helping in enhancing device performance by allowing on-chip modulation of the crystal resonator's parameters. In this way, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator is more compact in size and less power-consuming.

An integrated structure of crystal resonator and control circuit (110) and an integration method therefor. A lower cavity (102) is formed in a device wafer (100) containing the control circuit (110), and an upper cavity (310) is formed in a substrate (300). A bonding process is performed to bond the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator (200) is sandwiched between the device wafer (100) and the substrate (300). In this way, integration of the crystal resonator and the control circuit (110) is achieved. A semiconductor die (600) can be further bonded to the same semiconductor substrate. This helps in improving performance of the crystal resonator by allowing on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.