The present invention relates to a filter chip (1), comprising an interconnection of at least one first and one second resonator (2, 3) operating with bulk acoustic waves, wherein the first resonator (2) operating with bulk acoustic waves comprises a first piezoelectric layer (4) that is structured in such a way that the first resonator (2) has a lower resonant frequency than the second resonator (3).

An acoustic wave device includes: a first chip that includes a first substrate, and a first filter formed on a first surface of the first substrate; and a second chip that includes a second substrate, and a second filter formed on a second surface of the second substrate, the second surface being located in a plane different from the first surface.

An electronic device includes: a first substrate, a first function part in its first surface, an adhesive layer on the first surface so as to surround the first function part, a second substrate bonded to the first substrate by the adhesive layer to form a gap between the first and second substrates, a first via interconnection piercing the first substrate to connect the first surface and an opposite second surface, a second via interconnection piercing the second substrate to connect a third surface of the second substrate opposite to the first substrate and a fourth surface opposite to the third surface, a first terminal provided on the second surface and connected to the first via interconnection, a second terminal provided on the fourth surface and connected to the second via interconnection. The first function part is connected to at least one of the first and second via interconnections.

An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

A multiplexer includes: one or more transmit filters that are connected between an antenna terminal and one or more transmit terminals; one or more receive filters that are connected between the antenna terminal and one or more receive terminals; and a circuit that includes a longitudinally coupled acoustic wave filter and is connected in parallel to one or more series resonators of a first filter that is one of the one or more transmit filters and the one or more receive filters and includes the one or more series resonators and one or more parallel resonators each formed of a piezoelectric thin film resonator, wherein the longitudinally coupled acoustic wave filter is formed of IDTs formed on a chip of a second filter that is another one of the one or more transmit filters and the one or more receive filters and formed of a surface acoustic wave resonator.

An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

A module includes: a duplexer including an antenna terminal; a first wiring connecting the antenna terminal to an antenna; a second wiring coupled to the antenna terminal without the first wiring; and an inductor coupled to the second wiring.

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

An acoustic wave filter assembly having reduced on-die capacitance and improved isolation for high-frequency applications. The acoustic wave filter assembly includes a filter port, an antenna port, an acoustic wave filter connected between the filter port and the antenna port, one or more ground pins connected between the filter port and the antenna port, and a metallic guard ring extending around the acoustic wave filter assembly. At least one of the one or more ground pins is connected to the metallic guard ring. A diplexer, multiplexer, radio-frequency module and wireless device are also provided.