A high frequency module includes a mounting substrate, an acoustic wave filter, a protection member, a resin layer, and a shield layer. The acoustic wave filter is mounted on a first main surface of the mounting substrate. The protection member is disposed on a main surface of the acoustic wave filter that is far from the mounting substrate. The resin layer is disposed on the first main surface of the mounting substrate and covers an outer peripheral surface of the acoustic wave filter and an outer peripheral surface of the protection member. The shield layer covers the resin layer and the protection member. The protection member is in contact with both the acoustic wave filter and the shield layer. The acoustic wave filter includes a piezoelectric substrate. A main surface of the piezoelectric substrate that is far from the mounting substrate is in contact with the protection member.

A device includes a resonator stack. The resonator stack includes a first chiplet including a first acoustic resonator having a first resonant frequency and a second chiplet including a second acoustic resonator having a second resonant frequency that is different from the first resonant frequency. The device also includes a substrate coupled to the resonator stack, and electrical interconnections between the first chiplet and the second chiplet to provide a conductive path between the first acoustic resonator and the second acoustic resonator.

A packaged module can include a substrate having first and second sides, and a plurality of redistribution layers. The packaged module can further include a filter die implemented on the first side of the substrate, and a plurality of pins implemented on the second side of the substrate, such that the redistribution layers include a fan out circuit between the filter die and the pins. The packaged module can further include a passive element implemented as part of the redistribution layers and configured to support operation of the filter die.

An acoustic wave device includes a package substrate including first and second principal surfaces, an acoustic wave element at the first principal surface, a sealing resin layer covering at least a portion of the acoustic wave element, and a metal shield film covering the sealing resin layer. The package substrate includes a ground connection electrode in the package substrate, electrically connected to the acoustic wave element, and connected to a ground potential. The package substrate includes a side surface and a connection portion connected to at least a portion of an end edge on a side with the second principal surface in the side surface and at least a portion of an outer peripheral edge in the second principal surface. The shield film reaches the side surface of the package substrate and does not reach the connection portion, and the shield film is connected to the ground connection electrode.

An acoustic wave device includes a piezoelectric layer, electrodes, a support substrate, a resin sheet, a metallic frame, and an inorganic sheet. The electrodes oppose each other in an intersecting direction that intersects a thickness direction of the piezoelectric layer. The support substrate includes a first cavity extending through the support substrate so as to overlap at least a portion of the electrodes as viewed in the thickness direction. The resin sheet is arranged on a surface of the support substrate opposite to the piezoelectric layer to close the first cavity. The metallic frame includes a second cavity therein and surrounds the piezoelectric layer and the electrodes. The inorganic sheet is arranged on a surface of the metallic frame opposite to the piezoelectric layer to close the second cavity.