A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

A fluidic sensing device includes a first sidewall, a second sidewall, a bulk acoustic resonator structure, a biomolecule, and a cover. A fluidic channel is defined between the first and second sidewalls. The bulk acoustic resonator structure has a surface defining at least a portion of the bottom of the channel. The biomolecule is attached to the surface of the bulk acoustic resonator that forms the bottom of the channel. The cover is disposed over the channel and the first and second sidewalls. A portion of the cover disposed over the channel defines at least a portion of the top of the channel and blocks UV radiation from being transmitted through the cover. A first portion of the cover disposed over the first sidewall is transparent to UV radiation, and a second portion of the cover disposed over the second sidewall is transparent to UV radiation.

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.

A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer. The resonator structure is suspended in a cavity in a cap structure.

A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure includes: forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate; forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR; attaching a PR (photo-resist) film to tops of the inner pad electrodes; etching the PR film to expose the inner pad electrodes to the outside; and forming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

An acoustic resonator package includes a substrate, an acoustic resonator disposed on the substrate, the acoustic resonator including a first hydrophobic layer, a cap configured to accommodate the acoustic resonator, a bonding portion configured to bond the substrate to the cap, and a second hydrophobic layer disposed on the substrate at a position between the acoustic resonator and the bonding portion.