Resonator and filter devices and methods of fabrication. A resonator chip includes a substrate, a piezoelectric plate, and an acoustic Bragg reflector between the substrate and a back surface of the piezoelectric plate. A conductor pattern on a front surface of the piezoelectric plate includes a first plurality of contact pads and an interdigital transducer (IDT). The IDT and the piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic Bragg reflector is configured to reflect the shear primary acoustic mode. An interposer has a second plurality of contact pads on a back surface. A seal connects a perimeter of the piezoelectric plate to a perimeter of the interposer. Each contact pad of the first plurality of contact pads is directly connected to a respective contact pad of the second plurality of contact pads.

An acoustic wave resonator package includes an acoustic resonator comprising an acoustic wave generator on a surface of a substrate, a cover member disposed over the acoustic wave generator, a bonding member, disposed between the substrate and the cover member, to bond the substrate and the cover member to each other, and a wiring layer, disposed along surfaces of the cover member, connected to the acoustic resonator. Among the surfaces of the cover member, bonding surfaces to which the bonding member and the wiring layer are bonded at least partially have a roughness Rz in a range of 70 nm to 3.5 .Math.m.

An electronic component module includes an electronic component, a resin structure, a wiring portion, and a shield portion. The resin structure covers a second main surface and at least a portion of a side surface of the electronic component. The wiring portion is electrically connected to the electronic component. The shield portion includes a first conductor layer and a second conductor layer. The first conductor layer is spaced away from the electronic component between the electronic component and the resin structure, and has electrical conductivity. The second conductor layer is spaced away from the wiring portion between the wiring portion and the resin structure, and has electrical conductivity. In the shield portion, the first conductor layer and the second conductor layer are integrated.

A lead-out wiring, which is connected to a comb-shaped electrode formed on a principal surface of a piezoelectric substrate and is disposed to extend to an outer edge of the piezoelectric substrate an outer surrounding wall layer, which is arranged surrounding an outer periphery of the piezoelectric substrate including the lead-out wiring and forms a hollow portion that serves as an operation space for the comb-shaped electrode, and a top board, which bridges the outer surrounding wall layer to seal the hollow portion, are included.

An improved electro acoustic RF filter (FC) is provided. The RF filter comprises an electro acoustic resonator (EAR) connected between an input port and an output port, an impedance element and a damping and/or dissipation element (DE) in mechanical contact to the impedance element. The damping and/or dissipation element is provided and configured to remove acoustic energy from the impedance element which has a similar construction as the resonator on the same substrate. With such a construction an acoustically inactive impedance element (AIIE) is obtained.

An acoustic wave device includes: a substrate; an acoustic wave generating part disposed on a surface of the substrate; a ground pad disposed on the surface of the substrate; a support part spaced apart from the acoustic wave generating part on the surface of the substrate; a shielding member disposed on the support part, and spaced apart from the acoustic wave generating part; and a ground terminal disposed on the ground pad, wherein the ground pad and the shielding member are electrically connected to each other through the ground terminal.

An electronic device includes: a first substrate including a first functional element located on an upper surface of the first substrate; a second substrate that is flip-chip mounted on the upper surface of the first substrate through a bump, and includes a second functional element located on a lower surface of the second substrate; and a sealing member that is located on the upper surface of the first substrate, surrounds the second substrate in plan view, is not located between the first substrate and the second substrate, seals the first functional element and the second functional element so that the first functional element and the second functional element are located across an air gap.

An elastic wave device includes a piezoelectric substrate, an IDT electrode, and a cover member. The IDT electrode is provided on the piezoelectric substrate. The cover member is provided above the piezoelectric substrate and separate from the IDT electrode. The cover member includes a first cover member and a second cover member. The second cover member is laminated on a side of the first cover member opposite to the piezoelectric substrate. The glass transition point of the first cover member is higher than that of the second cover member.

In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.

An elastic wave device includes IDT electrodes on a first main surface of a piezoelectric substrate and a heat dissipating film on a second main surface and including a pair of opposing main surfaces and side surfaces connecting the pair of main surfaces. At least a portion of the side surfaces of the heat dissipating film is located in an inner side portion relative to the outer circumference of the second main surface of the piezoelectric substrate on an arbitrary cross section along a direction connecting the pair of main surfaces of the heat dissipating film.